Effects of 3D Channel Shape on the Performance of Nanoscale Gate-All-Around FETs

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Nanotechnology Pub Date : 2025-03-03 DOI:10.1109/TNANO.2025.3546872

Min Kyun Sohn;Sang-Hoon Kim;Seong Hyun Lee;Jeong Woo Park;Dongwoo Suh

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Abstract

Recent research on transistors has focused on gate-all-around (GAA) structures, which possess better gate controllability than previous fin field-effect transistor (FinFET) structures. The characteristics of these devices have been optimized through different channel shapes. However, the characteristics of GAA-FETs with channels that have the same cross-sectional area warrant further research. In this study, we simulated n-type GAA-FETs using the Global TCAD Solutions simulation tool to analyze the effective characteristics obtained by setting equal cross-sectional areas. The results show that the total on-current exhibited up to 40.5% enhancement based on shape for the same area. Similarly, under the same conditions, the on/off current ratio exhibited a difference of approximately 1.5 times based on the shape. These findings help determine the optimal shape of the GAA channel and predict the performance when physical limitations restrict the channel shape. Furthermore, they contribute to improving the characteristics of GAA-FETs in mass production.

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.