Dual- and triple- hetero-atom-doped carbon dots as novel additives for the engineering of defects passivation to boost performance of perovskite solar cells

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-18 DOI:10.1007/s10854-025-14547-y
Çisem Kırbıyık Kurukavak, Mütahire Tok, Merve Yurdakul, Mahmut Kuş
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Abstract

Methylammonium lead iodide (MAPbI3)-based perovskite solar cells (PSCs) offer highly efficient photovoltaics. However, several disadvantages such as poor stability and possibility of defect formation reducing film quality have restricted its commercialization. In this work, we reported the synthesis of dual- and triple-hetero-atom-doped carbon quantum dots (CQDs) via hydrothermal method and their effect of use as additive on the performance of PSCs. The boron (B) and phosphorous (P)-doped CQDs (B,P-CQDs), sulphur (S) and P-doped CQDs (S,P-CQDs), and B, S, and P-doped CQDs (B,S,P-CQDs) additives were described. Since these CQDs have many functional groups including hydroxyl (–OH), they can easily interact with Pb ions leading to the formation of PbO, as well as interaction with methyl ammonium ions. A reduced halide vacancy density and an increased nucleation energy of perovskite enhance crystal sizes and charge transfer. The passivation of surface defects reduces non-radiative recombination and ion migration, which plays an important role in photodegradation of the MAPbI3 films. Herein, the introduction of S,P-CQDs improved power conversion efficiency (PCE) from 10 to 15% and current density (Jsc) from 14.4 to 23.6 mA cm−2. PSCs added with dual- and triple-hetero-atom-doped CQDs showed narrower efficiency distribution in comparison to the control devices.

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双和三杂原子掺杂碳点作为缺陷钝化工程的新型添加剂,以提高钙钛矿太阳能电池的性能
甲基碘化铅(MAPbI3)基钙钛矿太阳能电池(PSCs)提供了高效的光伏发电。然而,其稳定性差、可能形成缺陷降低薄膜质量等缺点制约了其商业化。本文报道了水热法制备了双掺杂和三掺杂碳量子点(CQDs),并研究了CQDs作为添加剂对PSCs性能的影响。描述了硼(B)和磷(P)掺杂CQDs (B,P-CQDs)、硫(S)和磷掺杂CQDs (S,P-CQDs)以及B、S和P掺杂CQDs (B,S,P-CQDs)添加剂。由于这些CQDs具有包括羟基(-OH)在内的许多官能团,它们很容易与Pb离子相互作用形成PbO,也容易与甲基铵离子相互作用。卤化物空位密度的降低和钙钛矿成核能的增加增强了晶体尺寸和电荷转移。表面缺陷的钝化减少了非辐射复合和离子迁移,这在MAPbI3薄膜的光降解中起着重要作用。其中,S,P-CQDs的引入将功率转换效率(PCE)从10%提高到15%,电流密度(Jsc)从14.4提高到23.6 mA cm−2。与控制器件相比,添加双和三异质原子掺杂CQDs的PSCs的效率分布更窄。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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