Opposite gas-sensing behavior of n-xZnO/p-yCr2O3 nanocomposites to H2 against CO and its selectivity mechanism

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-03-21 DOI:10.1007/s10854-025-14548-x
Wen-Dong Zhou, Hong-Xia Liu, Qi Wang, Davoud Dastan, Hong-Bo Zhang, Hanieh Helli
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Abstract

There are several advantages to using metal-oxide semiconductor (MOS) gas sensors, including their high sensitivity, short response–recovery time, and long-term stability. However, the poor selectivity is a severe challenge in the applications of MOS gas sensors. For instance, it can be difficult for MOS sensors to differentiate between carbon monoxide (CO) and hydrogen (H2) due to their similar gas-sensing behaviors. In this paper, a series of n-xZnO/p-yCr2O3 nanocomposites (ZnxCry NPs, x:y represents the molar ratio of Zn:Cr) were prepared using a simple sol–gel method. The structural, composition, and the surface physicochemical states of the ZnxCry material were studied via X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The characterization results demonstrate that p-n heterojunctions of ZnxCry NPs have been prepared. Gas-sensing results showed that the ZnxCry NPs' gas-sensing behavior was influenced by the Zn:Cr molar ratio. Interestingly, Zn8Cr2 NPs sensors showed n-type responses to H2 but opposite responses (p-type) to CO, demonstrating that the low selectivity of MOS gas sensors can be addressed by modulating the n- or p-type semiconductor concentration in ZnxCry NPs. This paper offered an effective way to address the problem of poor selectivity of MOS sensors to CO and H2. The gas-sensing mechanism of ZnxCry NPs-based sensors is experimentally studied in details.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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