H.G.A. Huizing, J. Klootwijk, E. Aksen, J. Slotboom
{"title":"Base current tuning in SiGe HBT's by SiGe in the emitter","authors":"H.G.A. Huizing, J. Klootwijk, E. Aksen, J. Slotboom","doi":"10.1109/IEDM.2001.979658","DOIUrl":null,"url":null,"abstract":"Npn-type SiGe heterojunction bipolar transistors (HBT's) have high cut-off frequencies, but low breakdown voltages due to their high current gain. We show that a SiGe layer in the emitter can increase the base current and hence the breakdown voltage while the collector current and cut-off frequency are not reduced. Simulations and first experimental results clearly confirm this effect.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"40 1","pages":"40.5.1-40.5.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Npn-type SiGe heterojunction bipolar transistors (HBT's) have high cut-off frequencies, but low breakdown voltages due to their high current gain. We show that a SiGe layer in the emitter can increase the base current and hence the breakdown voltage while the collector current and cut-off frequency are not reduced. Simulations and first experimental results clearly confirm this effect.
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