A New Development of Direct Bonding to Aluminum and Nickel Surfaces by Silver Sintering in air Atmosphere

Ly May Chew, Tamira Stegmann, Erika Schwenk, M. Dubis, W. Schmitt
{"title":"A New Development of Direct Bonding to Aluminum and Nickel Surfaces by Silver Sintering in air Atmosphere","authors":"Ly May Chew, Tamira Stegmann, Erika Schwenk, M. Dubis, W. Schmitt","doi":"10.1109/ECTC.2019.00021","DOIUrl":null,"url":null,"abstract":"Owing to the superb properties of silver such as high melting temperature, high thermal and electrical conductivity, low temperature silver sinter technology has attracted growing attention in recent years especially for the applications required high power and high operating temperature. Current silver sinter technology required plating of precious metal finishing on the substrates prior to sintering process in order to form a strong sinter joint. Direct bonding on non-precious metal surfaces by silver sintering is therefore of great interest, since the precious metal finishing on substrate is no longer necessary, which will lead to the reduction of manufacturing cost. This paper explores the development of a safe-to-use micro-silver sinter paste for pressure sintering on aluminum and nickel surfaces. In this study, Ag metallized Si dies were attached on nickel-plated direct copper bonding substrates and high purity aluminum plates by silver sintering process at 250 °C with a pressure of 10 MPa for 3 min in air atmosphere. The cross-sectional SEM images of sintered samples indicate that a dense sintered layer was formed on Ni and Al surface. After die shear test, SEM-EDX was conducted on the fracture surface of Ni and Al substrates and the results confirmed that silver sintered joint was created on Ni and Al surface. The EDX analysis results further illustrate an interdiffusion of Ag/Ni and Ag/Al occurred at the interface located between sintered layer and substrates. High bonding strength of silver sintered joint was created on Ni and Al surfaces and the average die shear strength remained above 30 N/mm² after 500 h storage at 250 °C. Cohesive break in the sintered layer was obtained for both Ni and Al samples before and after high temperature storage where silver sintered layer can be found on both the die backside and the substrate surface indicating that good adhesion on Ni and Al surfaces was achieved with the newly developed silver sinter paste.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"19 1","pages":"87-93"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2019.00021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Owing to the superb properties of silver such as high melting temperature, high thermal and electrical conductivity, low temperature silver sinter technology has attracted growing attention in recent years especially for the applications required high power and high operating temperature. Current silver sinter technology required plating of precious metal finishing on the substrates prior to sintering process in order to form a strong sinter joint. Direct bonding on non-precious metal surfaces by silver sintering is therefore of great interest, since the precious metal finishing on substrate is no longer necessary, which will lead to the reduction of manufacturing cost. This paper explores the development of a safe-to-use micro-silver sinter paste for pressure sintering on aluminum and nickel surfaces. In this study, Ag metallized Si dies were attached on nickel-plated direct copper bonding substrates and high purity aluminum plates by silver sintering process at 250 °C with a pressure of 10 MPa for 3 min in air atmosphere. The cross-sectional SEM images of sintered samples indicate that a dense sintered layer was formed on Ni and Al surface. After die shear test, SEM-EDX was conducted on the fracture surface of Ni and Al substrates and the results confirmed that silver sintered joint was created on Ni and Al surface. The EDX analysis results further illustrate an interdiffusion of Ag/Ni and Ag/Al occurred at the interface located between sintered layer and substrates. High bonding strength of silver sintered joint was created on Ni and Al surfaces and the average die shear strength remained above 30 N/mm² after 500 h storage at 250 °C. Cohesive break in the sintered layer was obtained for both Ni and Al samples before and after high temperature storage where silver sintered layer can be found on both the die backside and the substrate surface indicating that good adhesion on Ni and Al surfaces was achieved with the newly developed silver sinter paste.
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空气气氛下银烧结与铝、镍表面直接结合的新进展
由于银具有高熔点、高导热性和高导电性等优良性能,低温银烧结技术近年来受到越来越多的关注,特别是在需要高功率和高工作温度的应用领域。目前的银烧结技术需要在烧结过程之前在衬底上镀上贵金属精加工,以形成牢固的烧结接头。因此,通过银烧结在非贵金属表面上直接结合是非常有趣的,因为不再需要在基材上进行贵金属精加工,这将导致制造成本的降低。本文研究了一种用于铝和镍表面压力烧结的安全使用的微银烧结膏体的开发。本研究采用银烧结工艺,在250℃、10 MPa、3 min的空气环境下,将银金属化的Si模具附着在镀镍直接铜键合基板和高纯铝板上。烧结试样的SEM横截面图表明,在Ni和Al表面形成了致密的烧结层。经过模剪试验,对Ni和Al基体断口进行SEM-EDX扫描,结果证实在Ni和Al表面形成了银烧结接头。EDX分析结果进一步表明,Ag/Ni和Ag/Al在烧结层与衬底之间的界面处发生了相互扩散。在250℃下保存500 h后,银烧结接头在Ni和Al表面形成了较高的结合强度,平均模抗剪强度保持在30 N/mm²以上。高温储存前后,Ni和Al样品的烧结层均出现了内聚断裂,在模具背面和衬底表面均出现了银烧结层,表明新制备的银烧结浆料在Ni和Al表面均取得了良好的附着力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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