M. Cassé, S. Barraud, C. Le Royer, M. Koyama, R. Coquand, D. Blachier, F. Andrieu, G. Ghibaudo, O. Faynot, T. Poiroux, G. Reimbold
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引用次数: 16
Abstract
We hereby present an exhaustive extraction and study of piezoresitive (PR) coefficients in advanced CMOS transistors. In particular, we have evidenced the dependence with channel thickness and channel material compositions (SiGe with various Ge contents). Moreover we report for the first time the measurement of PR coefficient on uniaxially strained and unstrained Tri-Gate Nanowires transistors.
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