B. Boksteen, S. Dhar, A. Ferrara, A. Heringa, R. Hueting, G. Koops, C. Salm, J. Schmitz
{"title":"On the degradation of field-plate assisted RESURF power devices","authors":"B. Boksteen, S. Dhar, A. Ferrara, A. Heringa, R. Hueting, G. Koops, C. Salm, J. Schmitz","doi":"10.1109/IEDM.2012.6479036","DOIUrl":null,"url":null,"abstract":"Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"8 1","pages":"13.4.1-13.4.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.
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