High-speed and low-power InAlAs/InGaAs heterojunction bipolar transistors for dense ultra high speed digital applications

Abstract

We demonstrate an InP-based high-speed, low-power HBT technology with 180 GHz cutoff frequency. Current Mode Logic (CML) static dividers at 64 GHz maximum toggle rate at a power dissipation of 29 mW/flip-flop and 16 GHz maximum toggle rate at a power dissipation of 1.8 mW/flip-flop show that the technology is applicable to dense 40 Gbps logic circuits. Submicron InP HBT technology opens up the possibility of one thousand logic gates all operating at 10-40 GHz clock rates at a few watts of total power dissipation.