C. Chen, T. Lin, J. Jung, N. Yabuoshi, Y. Sasaki, K. Komori, H. Shih, Chao Min Liao, M. Funabashi, N. Suzuki, Y. Ishii, T. Uchino, K. Nemoto, H. Yamamoto, S. Nishihara, S. Sasabe, A. Koike, S. Ikeda, J. Tsao
{"title":"Innovation of 300 mm fab manufacturing with single wafer technology","authors":"C. Chen, T. Lin, J. Jung, N. Yabuoshi, Y. Sasaki, K. Komori, H. Shih, Chao Min Liao, M. Funabashi, N. Suzuki, Y. Ishii, T. Uchino, K. Nemoto, H. Yamamoto, S. Nishihara, S. Sasabe, A. Koike, S. Ikeda, J. Tsao","doi":"10.1109/IEDM.2001.979578","DOIUrl":null,"url":null,"abstract":"In this paper, we discuss a new technology implemented with all single wafer process for 300 mm fab. Very aggressive cycle time reduction with high yield has been demonstrated (one-third cycle time of that of conventional fab) in single polysilicon triple metal 8M/4M low power SRAM. High performance devices with excellent reliability are also achieved.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"52 1","pages":"28.3.1-28.3.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979578","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, we discuss a new technology implemented with all single wafer process for 300 mm fab. Very aggressive cycle time reduction with high yield has been demonstrated (one-third cycle time of that of conventional fab) in single polysilicon triple metal 8M/4M low power SRAM. High performance devices with excellent reliability are also achieved.
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