{"title":"Processing of GaAs solar cells","authors":"G. La Roche","doi":"10.1109/PVSC.1988.105850","DOIUrl":null,"url":null,"abstract":"The processability of GaAs solar cells using processes established for space-grade silicon solar cells was tested on a 140-piece sample. The welding parameters were adapted to the requirements of GaAs solar cells by a reduction of the welding time at increased voltage and improved electrode shape. The resulting degradation of the electrical characteristics after welding is comparable to those observed for Si solar cells. The yield of the production sample up to coupon level is comparable to that of Si solar cells. On a coupon consisting of 24 (2*4 cm) cells mounted on a carbon fiber composite substrate, high-resistance capability against deep thermal cycling between +80 degrees C and -170 degrees C was demonstrated.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"974-978 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The processability of GaAs solar cells using processes established for space-grade silicon solar cells was tested on a 140-piece sample. The welding parameters were adapted to the requirements of GaAs solar cells by a reduction of the welding time at increased voltage and improved electrode shape. The resulting degradation of the electrical characteristics after welding is comparable to those observed for Si solar cells. The yield of the production sample up to coupon level is comparable to that of Si solar cells. On a coupon consisting of 24 (2*4 cm) cells mounted on a carbon fiber composite substrate, high-resistance capability against deep thermal cycling between +80 degrees C and -170 degrees C was demonstrated.<>
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砷化镓太阳能电池的加工
利用为空间级硅太阳能电池建立的工艺,在140片样品上测试了GaAs太阳能电池的可加工性。通过降低焊接时间和改善电极形状,使焊接参数符合砷化镓太阳能电池的要求。焊接后产生的电特性退化与硅太阳能电池所观察到的相当。生产样品的产率可与硅太阳能电池的产率相当。在安装在碳纤维复合材料衬底上的24个(2*4 cm)电池片上,展示了在+80℃至-170℃之间深度热循环的高电阻性能
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Minority carrier lifetime of GaAs on silicon Direct glassing of silicon solar cells Radiation resistance studies of amorphous silicon films Efficiency improvements in GaAs-on-Si solar cells Preparation and properties of high deposition rate a-Si:H films and solar cells using disilane
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