Pub Date : 1990-03-01DOI: 10.1109/PVSC.1988.105790
R. Ahrenkiel, M. Al-Jassim, D. Dunlavy, K. Jones, S. Vernon, S. Tobin, V. Haven
AlGaAs/GaAs double heterostructures for solar cells were grown on heteroepitaxial GaAs/Si layers by metal-organic chemical vapor deposition. These test devices were subsequently characterized by photoluminescence and transmission electron microscopy. The minority carrier lifetimes were found to be limited by recombination at mismatch dislocations. An inverse correlation between dislocation density and minority carrier lifetime was observed. The use of thick (8 mu m) GaAs buffer layers in conjunction with thermal annealing of these structures reduced the dislocation density by about an order of magnitude. The minority carrier lifetime in these buffered heterostructures increased from 0.1 to 2 ns.<>
采用金属-有机化学气相沉积的方法，在异质外延GaAs/Si层上生长出用于太阳能电池的AlGaAs/GaAs双异质结构。这些测试装置随后通过光致发光和透射电子显微镜进行了表征。发现少数载流子寿命受到错配位错处重组的限制。位错密度与少数载流子寿命呈负相关。使用厚的(8 μ m) GaAs缓冲层并结合这些结构的热退火，使位错密度降低了大约一个数量级。这些缓冲异质结构中的少数载流子寿命从0.1 ns增加到2ns。
{"title":"Minority carrier lifetime of GaAs on silicon","authors":"R. Ahrenkiel, M. Al-Jassim, D. Dunlavy, K. Jones, S. Vernon, S. Tobin, V. Haven","doi":"10.1109/PVSC.1988.105790","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105790","url":null,"abstract":"AlGaAs/GaAs double heterostructures for solar cells were grown on heteroepitaxial GaAs/Si layers by metal-organic chemical vapor deposition. These test devices were subsequently characterized by photoluminescence and transmission electron microscopy. The minority carrier lifetimes were found to be limited by recombination at mismatch dislocations. An inverse correlation between dislocation density and minority carrier lifetime was observed. The use of thick (8 mu m) GaAs buffer layers in conjunction with thermal annealing of these structures reduced the dislocation density by about an order of magnitude. The minority carrier lifetime in these buffered heterostructures increased from 0.1 to 2 ns.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"s3-21 1","pages":"684-688 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1990-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90812400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-01DOI: 10.1109/PVSC.1988.105845
P. A. White, R. Crabb, A. Dollery
An alternate method of attaching coverglasses to silicon solar cells-currently achieved using silicone adhesives-is presented. The method is based on the electrostatic bonding of a specially developed glass that has an ideal expansion match to the silicon solar cell. Basically, the coverglass and cell are joined by a permanent chemical anodic bond formed by subjecting the cell and coverglass to voltage, temperature, and pressure while in intimate contact with each other. Because the front surface of the solar cell forms one of the bonding interfaces, it is important to understand the significance of changes in the cell design or type. Work performed in characterizing required cell parameters, e.g. coating type, texture, etc., and the effects of the bonding process on cell output are discussed.<>
{"title":"Direct glassing of silicon solar cells","authors":"P. A. White, R. Crabb, A. Dollery","doi":"10.1109/PVSC.1988.105845","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105845","url":null,"abstract":"An alternate method of attaching coverglasses to silicon solar cells-currently achieved using silicone adhesives-is presented. The method is based on the electrostatic bonding of a specially developed glass that has an ideal expansion match to the silicon solar cell. Basically, the coverglass and cell are joined by a permanent chemical anodic bond formed by subjecting the cell and coverglass to voltage, temperature, and pressure while in intimate contact with each other. Because the front surface of the solar cell forms one of the bonding interfaces, it is important to understand the significance of changes in the cell design or type. Work performed in characterizing required cell parameters, e.g. coating type, texture, etc., and the effects of the bonding process on cell output are discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1940 1","pages":"949-953 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1989-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89339917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-04-01DOI: 10.1109/PVSC.1988.105853
J. Payson, J. R. Woodyard
A study of hydrogenated amorphous silicon thin films irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15 cm/sup -2/ is presented. The films were characterized using photothermal deflection spectroscopy, transmission and reflection spectroscopy, and photoconductivity and annealing measurements. Large changes were observed in the subband-gap optical absorption for energies between 0.9 and 1.7 eV. The steady-state photoconductivity showed decreases of almost five orders of magnitude for a fluence of 1E15 cm/sup -2/, but the slope of the intensity dependence of the photoconductivity remained almost constant for all fluences. Substantial annealing occurs even at room temperature, and for temperatures greater than 448 K the damage is completely annealed. The data are analyzed to describe the defects and the density of states function.<>
{"title":"Radiation resistance studies of amorphous silicon films","authors":"J. Payson, J. R. Woodyard","doi":"10.1109/PVSC.1988.105853","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105853","url":null,"abstract":"A study of hydrogenated amorphous silicon thin films irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15 cm/sup -2/ is presented. The films were characterized using photothermal deflection spectroscopy, transmission and reflection spectroscopy, and photoconductivity and annealing measurements. Large changes were observed in the subband-gap optical absorption for energies between 0.9 and 1.7 eV. The steady-state photoconductivity showed decreases of almost five orders of magnitude for a fluence of 1E15 cm/sup -2/, but the slope of the intensity dependence of the photoconductivity remained almost constant for all fluences. Substantial annealing occurs even at room temperature, and for temperatures greater than 448 K the damage is completely annealed. The data are analyzed to describe the defects and the density of states function.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"990-995 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1989-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83333002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-09-26DOI: 10.1109/PVSC.1988.105704
S. Vernon, S. Tobin, V. Haven, C. Bajgar, T. M. Dixon, M. Al‐Jassim, R. Ahrenkiel, K. Emery
GaAs grown directly on silicon substrates has the potential for reducing the cost and weight of single-junction GaAs cells, as well as enabling a III-VlSi monolithic tandem technology. This paper reports the achievement of a GaAs-on-Si solar cell having an efficiency of 17.6% (one-sun, AM1.5 25°C, SERI measurement), which is the highest reported value for a cell of this structure. A GaAs-on-GaAs cell recently fabricated has been measured at SERI to be 24.3% efficient (AM1.5), which is the highest one-sun value ever reported for any cell.
{"title":"Efficiency improvements in GaAs-on-Si solar cells","authors":"S. Vernon, S. Tobin, V. Haven, C. Bajgar, T. M. Dixon, M. Al‐Jassim, R. Ahrenkiel, K. Emery","doi":"10.1109/PVSC.1988.105704","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105704","url":null,"abstract":"GaAs grown directly on silicon substrates has the potential for reducing the cost and weight of single-junction GaAs cells, as well as enabling a III-VlSi monolithic tandem technology. This paper reports the achievement of a GaAs-on-Si solar cell having an efficiency of 17.6% (one-sun, AM1.5 25°C, SERI measurement), which is the highest reported value for a cell of this structure. A GaAs-on-GaAs cell recently fabricated has been measured at SERI to be 24.3% efficient (AM1.5), which is the highest one-sun value ever reported for any cell.","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"481-485 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80944726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-06-01DOI: 10.1109/PVSC.1988.105661
P. Bhat, C. Marshall, J. Sandwisch, H. Chatham, R. Schropp, A. Madan
The authors report material and solar cell properties for a-Si:H intrinsic layers deposited at rates of up to 20 A-s/sup -1/ using RF plasma-enhanced chemical vapor deposition in disilane. The optoelectronic properties of a-Si:H thin films and the efficiencies of solar cells fabricated with these intrinsic layers show a weak dependence on the deposition rate of the intrinsic a-Si:H films. Solar cells with efficiencies of 9 and 8% with the intrinsic layers deposited at approximately 10 and approximately 20 A-s/sup -1/, respectively, were obtained. Data on the stability of disilane solar cells are also presented.<>
{"title":"Preparation and properties of high deposition rate a-Si:H films and solar cells using disilane","authors":"P. Bhat, C. Marshall, J. Sandwisch, H. Chatham, R. Schropp, A. Madan","doi":"10.1109/PVSC.1988.105661","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105661","url":null,"abstract":"The authors report material and solar cell properties for a-Si:H intrinsic layers deposited at rates of up to 20 A-s/sup -1/ using RF plasma-enhanced chemical vapor deposition in disilane. The optoelectronic properties of a-Si:H thin films and the efficiencies of solar cells fabricated with these intrinsic layers show a weak dependence on the deposition rate of the intrinsic a-Si:H films. Solar cells with efficiencies of 9 and 8% with the intrinsic layers deposited at approximately 10 and approximately 20 A-s/sup -1/, respectively, were obtained. Data on the stability of disilane solar cells are also presented.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"03 1","pages":"91-96 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88268898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105877
T. Key, D. Menicucci
Problems in applying the National Electrical Code (NEC) to PV power system design and installation are presented. Generic design requirements are discussed, including switching, DC collection, ground-fault detection, and disconnection. A DC-service panel concept is introduced as a practical approach to meeting both NEC and functional design requirements. A sample design and economic assessment are provided to support this concept.<>
{"title":"Practical application of the National Electrical Code to photovoltaic system design","authors":"T. Key, D. Menicucci","doi":"10.1109/PVSC.1988.105877","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105877","url":null,"abstract":"Problems in applying the National Electrical Code (NEC) to PV power system design and installation are presented. Generic design requirements are discussed, including switching, DC collection, ground-fault detection, and disconnection. A DC-service panel concept is introduced as a practical approach to meeting both NEC and functional design requirements. A sample design and economic assessment are provided to support this concept.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"1110-1115 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74138030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105875
G. Mon, L. Wen, R. Ross
Mechanisms by which moisture enters photovoltaic modules and techniques for reducing such interactions are reported. Results from a study of the effectiveness of various module sealants are given. Techniques for measuring the rate and quantity of moisture ingress are discussed. It is shown that scribe lines and porous frit bridging conductors provide preferential paths for moisture ingress and that moisture diffusion by surface/interfacial paths is considerably more rapid than diffusion by bulk paths, which implies that thin-film substrate and supersubstrate modules are much more vulnerable to moist environments than are bulk-encapsulated crystalline-silicon modules. Design approaches that reduce moisture entry are discussed.<>
{"title":"Water-module interaction studies","authors":"G. Mon, L. Wen, R. Ross","doi":"10.1109/PVSC.1988.105875","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105875","url":null,"abstract":"Mechanisms by which moisture enters photovoltaic modules and techniques for reducing such interactions are reported. Results from a study of the effectiveness of various module sealants are given. Techniques for measuring the rate and quantity of moisture ingress are discussed. It is shown that scribe lines and porous frit bridging conductors provide preferential paths for moisture ingress and that moisture diffusion by surface/interfacial paths is considerably more rapid than diffusion by bulk paths, which implies that thin-film substrate and supersubstrate modules are much more vulnerable to moist environments than are bulk-encapsulated crystalline-silicon modules. Design approaches that reduce moisture entry are discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"82 1","pages":"1098-1102 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75603454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105760
R. King, R. Sinton, R. M. Swanson
The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm/sup 2/). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, J/sub o/, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized
{"title":"Front and back surface fields for point-contact solar cells","authors":"R. King, R. Sinton, R. M. Swanson","doi":"10.1109/PVSC.1988.105760","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105760","url":null,"abstract":"The authors discuss the use of planar dopant diffusions to reduce surface recombination in point-contact solar cells. These noncurrent collecting diffusions can boost the efficiency of point-contact cells significantly for incident intensities below about 5 suns (0.500 W/cm/sup 2/). At these low power levels, the surface recombination is the dominant recombination mechanism. Measured values of the emitter saturation current density, J/sub o/, of phosphorus diffusions at the oxidized silicon surface are presented for a range of surface concentrations and furnace conditions on untexturized","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"538-544 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74189819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105742
Y. Yeh, K.I. Chang, C. Cheng, F. Ho, P. Iles
The authors describe progress in replacing gallium arsenide substrates with germanium substrates in the high-volume production of GaAs solar cells. The Ge substrates provide the option of larger, stronger, and thinner cells, with all the electrical advantages of GaAs cells. Early optimization procedures enhanced the GaAs/Ge cell output, using the enhanced photovoltage generated at the GaAs/Ge interface. More detailed measurements showed that these optimized efficiency values were obtained under simulated AM0 spectra which had excess output in the near-infrared region. The enhanced V/sub oc/ led to higher V/sub oc/ temperature coefficients. Present efforts to scale-up GaAs/Ge cell production have concentrated on achieving passive-Ge conditions, for operation under true AM0 conditions. This produces cells with properties of GaAs/GaAs cells with all the mechanical advantages of Ge substrates. AM0 efficiency up to 18.2% has been demonstrated for 4 cm*2 cm passive-Ge GaAs/Ge solar cells.<>
{"title":"High volume production of rugged, high efficiency GaAs/Ge solar cells","authors":"Y. Yeh, K.I. Chang, C. Cheng, F. Ho, P. Iles","doi":"10.1109/PVSC.1988.105742","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105742","url":null,"abstract":"The authors describe progress in replacing gallium arsenide substrates with germanium substrates in the high-volume production of GaAs solar cells. The Ge substrates provide the option of larger, stronger, and thinner cells, with all the electrical advantages of GaAs cells. Early optimization procedures enhanced the GaAs/Ge cell output, using the enhanced photovoltage generated at the GaAs/Ge interface. More detailed measurements showed that these optimized efficiency values were obtained under simulated AM0 spectra which had excess output in the near-infrared region. The enhanced V/sub oc/ led to higher V/sub oc/ temperature coefficients. Present efforts to scale-up GaAs/Ge cell production have concentrated on achieving passive-Ge conditions, for operation under true AM0 conditions. This produces cells with properties of GaAs/GaAs cells with all the mechanical advantages of Ge substrates. AM0 efficiency up to 18.2% has been demonstrated for 4 cm*2 cm passive-Ge GaAs/Ge solar cells.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"43 1","pages":"451-456 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78661284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105944
T. Chu, S. Chu, K. Han, M. K. Mantravadi
The use of contact materials with a higher work function than p-CdTe is investigated using p-HgTe as the contact material. The deposition of p-HgTe on p-CdTe is carried out by the direct combination of the elemental vapors in a gas-flow system and by the close-spaced sublimation (CSS) technique. The process parameters in the direct combination technique are more readily controlled than those in the CSS technique. The p-HgTe/p-CdTe contact resistance was found to be very similar to the Au/p-CdTe contact resistance.<>
{"title":"Mercury telluride as an ohmic contact to efficient thin film cadmium telluride solar cells","authors":"T. Chu, S. Chu, K. Han, M. K. Mantravadi","doi":"10.1109/PVSC.1988.105944","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105944","url":null,"abstract":"The use of contact materials with a higher work function than p-CdTe is investigated using p-HgTe as the contact material. The deposition of p-HgTe on p-CdTe is carried out by the direct combination of the elemental vapors in a gas-flow system and by the close-spaced sublimation (CSS) technique. The process parameters in the direct combination technique are more readily controlled than those in the CSS technique. The p-HgTe/p-CdTe contact resistance was found to be very similar to the Au/p-CdTe contact resistance.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"133 1","pages":"1422-1425 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76111760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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