S. Vernon, S. Tobin, V. Haven, C. Bajgar, T. M. Dixon, M. Al‐Jassim, R. Ahrenkiel, K. Emery
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引用次数: 16
Abstract
GaAs grown directly on silicon substrates has the potential for reducing the cost and weight of single-junction GaAs cells, as well as enabling a III-VlSi monolithic tandem technology. This paper reports the achievement of a GaAs-on-Si solar cell having an efficiency of 17.6% (one-sun, AM1.5 25°C, SERI measurement), which is the highest reported value for a cell of this structure. A GaAs-on-GaAs cell recently fabricated has been measured at SERI to be 24.3% efficient (AM1.5), which is the highest one-sun value ever reported for any cell.
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