Rinus Lee, N. Petrov, J. Kassim, M. Gribelyuk, J. Yang, L. Cao, K. Yeap, T. Shen, ATIQAH NAJWA ZAINUDDIN, A. Chandrashekar, S. Ray, E. Ramanathan, A. S. Mahalingam, R. Chaudhuri, J. Mody, D. Damjanovic, Z. Sun, R. Sporer, T. J. Tang, H. Liu, J. Liu, B. Krishnan
{"title":"Nanosecond Laser Anneal for BEOL Performance Boost in Advanced FinFETs","authors":"Rinus Lee, N. Petrov, J. Kassim, M. Gribelyuk, J. Yang, L. Cao, K. Yeap, T. Shen, ATIQAH NAJWA ZAINUDDIN, A. Chandrashekar, S. Ray, E. Ramanathan, A. S. Mahalingam, R. Chaudhuri, J. Mody, D. Damjanovic, Z. Sun, R. Sporer, T. J. Tang, H. Liu, J. Liu, B. Krishnan","doi":"10.1109/VLSIT.2018.8510651","DOIUrl":null,"url":null,"abstract":"Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 – 5% in IDsat. Additionally, reliability was enhanced with an improvement in dielectric VBD and Cu EM performance without impacting the ULK mechanical integrity. Our results demonstrate a path to extending Cu interconnects for performance boost in 14nm FinFETs and beyond.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"47 1","pages":"61-62"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 – 5% in IDsat. Additionally, reliability was enhanced with an improvement in dielectric VBD and Cu EM performance without impacting the ULK mechanical integrity. Our results demonstrate a path to extending Cu interconnects for performance boost in 14nm FinFETs and beyond.
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