High mobility zinc oxynitride-TFT with operation stability under light-illuminated bias-stress conditions for large area and high resolution display applications
Myungkwan Ryu, Tae Sang Kim, K. Son, Hyun-Suk Kim, Joonsuk Park, Jong‐Baek Seon, Seok-Jun Seo, Sun‐Jae Kim, Eunha Lee, Hyungik Lee, S. Jeon, Seungwu Han, Sang Yoon Lee
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引用次数: 20
Abstract
We have investigated material and electrical properties of ZnON based on 1st principle calculations and TFT evaluations. Theoretically, ZnON has high mobility characteristics and band-structure for high stability. Fabricated TFTs exhibited high mobility (100 cm2/Vs), good uniformity, and stable operation performance such as -2.87 V of Vth-shift under light illuminated bias-stress condition. As a new approach to overcome the performance limit of oxide-semiconductors, ZnON technology is strongly promising to achieve high mobility and operation stability required for next generation displays.
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