{"title":"Full quantum simulation, design, and analysis of Si tunnel diodes, MOS leakage and capacitance, HEMTs, and RTDs","authors":"R. Lake","doi":"10.1109/IEDM.2001.979439","DOIUrl":null,"url":null,"abstract":"The Nanoelectronic Engineering Modeling software (NEMO) has been used to model the quantum electron and hole transport and charge in a wide variety of material systems and semiconductor devices. This paper provides an overview of NEMO's current status, its applications, and its theoretical extensions.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"33 1","pages":"5.5.1-5.5.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The Nanoelectronic Engineering Modeling software (NEMO) has been used to model the quantum electron and hole transport and charge in a wide variety of material systems and semiconductor devices. This paper provides an overview of NEMO's current status, its applications, and its theoretical extensions.
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