Jong Kyung Park, Dong-il Moon, Yang‐Kyu Choi, Seok-Hee Lee, Ki-hong Lee, S. Pyi, B. Cho
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引用次数: 11
Abstract
The mechanism of transient Vth shift after erase is studied in detail. It is concluded that the main mechanism is hole redistribution in the charge trap layer. A new erase scheme is proposed and demonstrated to reduce transient Vth shift. The impact of transient Vth shift on the 3D charge trap device is investigated, as well.
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