First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices

R. Delhougne, A. Arreghini, E. Rosseel, A. Hikavyy, E. Vecchio, L. Zhang, M. Pak, L. Nyns, T. Raymaekers, N. Jossart, L. Breuil, S. S. V-Palayam, C. Tan, G. Van den bosch, A. Furnémont
{"title":"First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices","authors":"R. Delhougne, A. Arreghini, E. Rosseel, A. Hikavyy, E. Vecchio, L. Zhang, M. Pak, L. Nyns, T. Raymaekers, N. Jossart, L. Breuil, S. S. V-Palayam, C. Tan, G. Van den bosch, A. Furnémont","doi":"10.1109/VLSIT.2018.8510635","DOIUrl":null,"url":null,"abstract":"We are demonstrating for the first time epi-based monocrystalline silicon macaroni channel 3-D NAND devices. The highly controllable channel replacement process sequence leads to > 95% yield, with excellent uniformity and reproducibility, proving its potential for manufacturability. The electron mobility of the channel is improved by a factor 30 compared to the polycrystalline macaroni Si channel, together with a reduction of the off state leakage. Furthermore, this channel replacement fabrication process does not affect memory performance and reliability. The performance benefits of this channel replacement technique make it a potential candidate for fabricating future 3-D NAND devices.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"40 1","pages":"203-204"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

We are demonstrating for the first time epi-based monocrystalline silicon macaroni channel 3-D NAND devices. The highly controllable channel replacement process sequence leads to > 95% yield, with excellent uniformity and reproducibility, proving its potential for manufacturability. The electron mobility of the channel is improved by a factor 30 compared to the polycrystalline macaroni Si channel, together with a reduction of the off state leakage. Furthermore, this channel replacement fabrication process does not affect memory performance and reliability. The performance benefits of this channel replacement technique make it a potential candidate for fabricating future 3-D NAND devices.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
首次展示单晶硅通心粉通道用于3-D NAND存储器器件
我们首次展示了基于外延电的单晶硅通心粉通道3-D NAND器件。具有高度可控性的通道置换工艺序列,成品率> 95%,具有良好的均匀性和可重复性,证明了其可制造性的潜力。与多晶通心粉硅通道相比,该通道的电子迁移率提高了30倍,同时减少了关闭状态泄漏。此外,这种通道替代制造工艺不会影响存储器的性能和可靠性。这种通道替代技术的性能优势使其成为制造未来3d NAND器件的潜在候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Low RA Magnetic Tunnel Junction Arrays in Conjunction with Low Switching Current and High Breakdown Voltage for STT-MRAM at 10 nm and Beyond A Circuit Compatible Accurate Compact Model for Ferroelectric-FETs A Threshold Switch Augmented Hybrid-FeFET (H-FeFET) with Enhanced Read Distinguishability and Reduced Programming Voltage for Non-Volatile Memory Applications Sensors and related devices for IoT, medicine and s mart-living A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1