Yue Yang, S. Su, P. Guo, Wei Wang, X. Gong, Lanxiang Wang, Kain Lu Low, Guangze Zhang, C. Xue, B. Cheng, G. Han, Y. Yeo
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引用次数: 61
Abstract
In this work, we report the first demonstration of GeSn pTFET. Good device characteristics were obtained. This may be attributed to direct BTBT, high hole mobility in the GeSn channel, and the formation of abruptly and heavily doped N+ source. The ION performance can be improved with further device optimization.
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