A. Hara, Y. Mishima, T. Kakehi, F. Takeuchi, M. Takei, K. Yoshino, K. Suga, M. Chida, N. Sasaki
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引用次数: 19
Abstract
We have developed high performance poly-Si TFTs, which have comparable performance to that of [100] Si-MOSFETs, by using a stable scanning DPSS CW laser lateral crystallization without introduction of thermal damage to 300/spl times/300 mm/sup 2/ glass substrates with process temperature below 450/spl deg/C.
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