Study on non-uniformity of Through-Mask electroplated Ni thin-film

Jun Tang, Hong Wang, Rui Liu, Shengping Mao, Xiaolin Zhao, G. Ding
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引用次数: 3

Abstract

Through-mask electroplating has been widely used in the fabrication of chips, BGA substrates and PCBs etc. The uniformity of plating thin-film is the major factor contributed to the reliability of the products. Currently, it is usually by setting optimum plating parameters and adopting electrochemical method to achieve the uniformity of plating. However, the problem of non-uniform distribution of electric field, which is the major cause of the non-uniformity of the plating thin-film, has not been solved. In this paper, finite element method (FEM) was developed to analyze the non-uniform distribution of electric field under different conditions in the process of electroplating. The results show that different thickness of photo-resist and size of electroplating cell are two major factors contribute to the uniformity of plating thin-film. The uniform of electroplating cell can be improved by adding in-chip auxiliary electrode. Also better uniformity of the plating film in radial direction can achieved by setting a shield in the proper position of the plating solution and annular out-chip auxiliary electrode (Cu) around the wafer. The simulation results were consistent with experimental results, which proved that finite element method is an effect way to simulate the electroplating process.
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透掩膜镀镍薄膜不均匀性的研究
通过掩模电镀已广泛应用于芯片、BGA衬底和pcb等领域。镀层的均匀性是影响产品可靠性的主要因素。目前,通常是通过设定最佳电镀参数和采用电化学方法来达到镀层的均匀性。然而,电场分布不均匀的问题是导致镀层不均匀的主要原因,一直没有得到解决。本文采用有限元法对电镀过程中不同条件下电场的不均匀分布进行了分析。结果表明,光刻胶厚度和电镀槽尺寸的不同是影响镀层均匀性的两个主要因素。通过在片内添加辅助电极,可以改善电镀槽的均匀性。在镀液的适当位置设置屏蔽层,在晶圆周围设置环形片外辅助电极(Cu),可以使镀层径向均匀性更好。仿真结果与实验结果吻合较好,证明了有限元法是一种有效的模拟电镀过程的方法。
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