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2008 International Conference on Electronic Packaging Technology & High Density Packaging最新文献

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Evaluate anti-shock property of solder bumps by impact test 通过冲击试验评估焊料凸点的抗冲击性能
H. Xi, Minyi Lou, B. An, Fengshun Wu, Yiping Wu
Anti-shock property of lead-free Sn96.5-Ag3.0-Cu0.5 solder bumps was investigated by the high speed impact to explore the relation among the fracture modes and the reflow profile and the microstructure of solder joint. Solder bumps were formed with various reflow profiles and multi-reflow and then subjected to the impact test under a constant speed of 1.8 m/s and a shear standoff of 50 mum. The results show that the IMC status has a close relation with the impact behavior upon one reflow. When the heating factor increases beyond 800 s-degC, the thickness of IMC layer goes up, and the impact absorbed energy of solder bump raises quickly. Upon multi-reflow using the same profile, the IMC thickness changed a little but the failure modes varied a lot.
采用高速冲击的方法研究了无铅Sn96.5-Ag3.0-Cu0.5焊点的抗冲击性能,探讨了其断裂方式与焊点回流分布及组织的关系。采用不同回流形状和多次回流形成钎料凸点,并在1.8 m/s的恒速度和50 ma的剪切距离下进行冲击试验。结果表明,内模控制状态与单次回流冲击行为密切相关。当加热系数增加到800s℃以上时,IMC层厚度增加,凸点冲击吸收能迅速增加。采用同一型线进行多次回流时,内嵌层厚度变化不大,但失效模式变化较大。
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引用次数: 0
The effect of the different teflon films on anisotropic conductive adhesive film (ACF) bonding 不同聚四氟乙烯薄膜对各向异性导电胶膜(ACF)粘接的影响
Jun Zhang, Y. Lin, Liugang Huang
New interconnect materials are always necessary as a result of evolving packaging technologies and increasing performance and environmental demands on electronic systems. Polymer-based conductive-adhesive materials have become widely used in many electronic packaging interconnect applications. Among all the conductive-adhesive materials, the anisotropic conductive adhesives (ACA) (or anisotropic conductive adhesive films, ACF) have gained popularity as a potential replacement for solder interconnects. For ACF interconnection, thermo-compression (T/C) bonding is the most common method. In this study, the effects of the some important processing parameters, including the increasing rate of bonding temperature and different Teflon films, on the reliability of the ACF joints were investigated. Results show that the performances of the ACF joints were affected by the distribution of conductive particles and the curing degree of the ACF, which was determined by the bonding temperature ramp rates. The bonding strengths of ACF joints are different for the different Teflon filmpsilas thickness and kinds.
由于不断发展的封装技术以及对电子系统的性能和环境要求的提高,新的互连材料总是必要的。聚合物基导电粘接材料已广泛应用于许多电子封装互连领域。在所有导电粘合材料中,各向异性导电胶粘剂(ACA)(或各向异性导电胶膜,ACF)作为焊接互连的潜在替代品而受到欢迎。对于ACF互连,热压缩(T/C)键合是最常用的方法。在本研究中,研究了一些重要的工艺参数,包括连接温度的增加速度和不同的Teflon薄膜,对ACF接头可靠性的影响。结果表明:导电颗粒的分布和ACF的固化程度影响ACF接头的性能,而ACF的固化程度又由键合温度斜坡率决定;不同的聚四氟乙烯膜厚度和种类对ACF接头的结合强度有不同的影响。
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引用次数: 0
A March-CL test for interconnection faults of SOC SOC互连故障的3 - cl测试
Zhang Jinyi, Yang Xiaodong, Yang Yi, Zhang Dong, Dong Hui
Shrinks of feature size, high working frequency, and rising number of the IP cores integrated in SOC make the problem with interconnection test critics. A March-CL test for interconnection faults of SOC is proposed in this article. According to the method, eight test patterns are used to detect stuck and delay faults of interconnection between IP cores. The IP connected by interconnection under test (IUT) is wrapped and complied with IEEE1500. Short test time and low area overhead are achieved with the method. Moreover, modified wrapper cell structure with simple control logic is adopted for detecting delay in March-CL test. Finally, March-CL test is applied to ITCpsila02 bench, and result proves that the method covers 100% of stuck, bridge and delay faults in synchronous interconnection test.
特征尺寸的缩小、高工作频率以及集成在SOC中的IP核数量的增加使互连测试批评者面临问题。本文提出了一种SOC互连故障的3 - cl测试方法。根据该方法,采用8种测试模式检测IP核间互连卡滞和延迟故障。被测互联(IUT)连接的IP经过封装,符合IEEE1500标准。该方法具有测试时间短、面积开销小等优点。此外,在March-CL测试中,采用改进的包装单元结构和简单的控制逻辑来检测延迟。最后,在ITCpsila02台架上进行了March-CL测试,结果表明该方法对同步互联测试中的卡、桥和延迟故障的检测覆盖率达到100%。
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引用次数: 0
The reliability study of sub 100 microns SnAg flip chip solder bump on FR4 substrate under thermal cycling 热循环条件下FR4衬底上亚100微米SnAg倒装片焊点的可靠性研究
Xiaoqin Lin, L. Luo
Due to the advantages of small-footprint, short-lead, high performance, high-packaging-density and thin profile, flip-chip-on-board (FCOB) technology is becoming an attractive choice in todaypsilas high density electronic packaging industry. With the trend toward lead-free and miniaturization in consumer electronics, the fatigue reliability of the small size lead-free FC solder joint on low cost PCB substrate are becoming one of the important issues. In this study, the reliability of sub 100 microns Sn-3.0Ag flip chip solder bump on FR4 substrate was investigated under thermal cycling between -40degC to 125degC. The influences of the shape of solder joint on the failed plane and the fatigue life were studied. The failed plane of the solder joint was discussed by the stress state analysis of the solder joint. Using the metallography, SEM, and live testing of the resistance, failure character and failure mechanism of the solder joint before and after underfilling were analyzed. The increasement of the fatigue life with the use of underfill was interpreted by plastic mechanics.
由于板上倒装芯片(FCOB)技术具有占地面积小、引线短、性能优异、封装密度高、外形轻薄等优点,正成为当今高密度电子封装行业的一个有吸引力的选择。随着消费类电子产品的无铅化和小型化趋势,低成本PCB基板上小尺寸无铅FC焊点的疲劳可靠性成为重要问题之一。在本研究中,研究了FR4衬底上亚100微米Sn-3.0Ag倒装芯片焊料凸点在-40℃至125℃热循环下的可靠性。研究了焊点形状对失效面及疲劳寿命的影响。通过对焊点的应力状态分析,探讨了焊点的失效面。通过金相、扫描电镜和现场电阻测试,分析了欠填充前后焊点的破坏特征和破坏机理。用塑性力学解释了下填土对疲劳寿命的提高。
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引用次数: 3
The effects of Ni nanoparticles addition on shear behavior and microstructure of Sn-Ag Lead-free solder Ni纳米颗粒对Sn-Ag无铅焊料剪切性能和显微组织的影响
Fangjuan Qi, Li Sun, Zhezhe Hou, Jianqiang Wang, C. Qin
In this article, the effects of Ni nanoparticles addition on shear property and microstructure of Sn-3.5Ag Lead-free solder joint was studied. The nickel nano-composite Sn-3.5Ag solder was prepared by adding dispersant to the dry nanoparticles and mechanically stirred Ni nanoparticles into the Sn-3.5Ag Lead-free solder paste. The shear force of the Sn-3.5Ag solder, 0.5 and 1.0 wt% nickel nano-composite solder was tested respectively at reflow 120s and 240s. The result shows that adding nickel nanoparticles can improve the shear performance of the soldered joint; the shear force of the soldered joint is highest when adding 0.5 wt% Ni nanoparticles at reflow 240s. The SEM observations shows that the hexagonal Cu6Sn5 IMC (intermetallic compound) in the inside solder is disappears gradually and the morphsa of the IMC that on the interface of the solder joint becomes planar after adding Ni nanoparticles into solder.
研究了Ni纳米粒子的加入对Sn-3.5Ag无铅焊点剪切性能和显微组织的影响。通过在干燥的纳米粒子中加入分散剂,并将Ni纳米粒子机械搅拌到Sn-3.5Ag无铅锡膏中,制备了镍纳米复合Sn-3.5Ag钎料。测试了Sn-3.5Ag、0.5 wt%和1.0 wt%镍纳米复合钎料在回流120秒和240秒时的剪切力。结果表明:纳米镍的加入可以改善焊接接头的剪切性能;在回流240s时,加入0.5 wt% Ni纳米颗粒的焊接接头剪切力最大。SEM观察表明,在钎料中加入Ni纳米粒子后,钎料内部的六角形Cu6Sn5金属间化合物IMC逐渐消失,钎料界面上的IMC形态变为平面形态。
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引用次数: 2
Effects of phosphor’s thickness and concentration on performance of white LEDs 荧光粉厚度和浓度对白光led性能的影响
Zongyuan Liu, Sheng Liu, Kai Wang, Xiaobing Luo
The state of phosphor will greatly influence the packaging performance such as luminous efficiency, quality of white light and color uniformity. The analysis presents that the small variations of thickness and concentration could significantly influence the light extraction efficiency and the correlated color temperature (CCT). With the increase of thickness and concentration, the light extraction efficiency is reduced, and the yellow blue ratio is increased, which means the color will tend to be warm white or yellow light. The reflector has slight influence on the performance, and the remote phosphor location is a better choice in packaging. When the thickness and concentration are determined, the manufacture tolerance for the variation are in the range of plusmn 0.02 mm for thickness and plusmn 5 mm-1 for concentration.
荧光粉的状态对发光效率、白光质量和颜色均匀性等封装性能有很大影响。分析表明,厚度和浓度的微小变化会显著影响光提取效率和相关色温(CCT)。随着厚度和浓度的增加,光提取效率降低,黄蓝比增加,即颜色将趋向于暖白色或黄光。反射器对性能影响较小,在封装中采用远端荧光粉位置是较好的选择。当厚度和浓度确定时,制造公差的变化范围为厚度0.02 mm和浓度5mm -1。
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引用次数: 3
Failure mode analysis of lead-free solder joints under differential reflow profiles by high speed impact testing 用高速冲击试验分析不同回流工况下无铅焊点的失效模式
C.Y. Lin, Y. Chen, G. Shen, D. Liu, C. Kuo, C.L. Hsu
The aim of this research is to investigate the mechanical behavior of lead-free solder for high speed impact. A high speed impact test was set up to measure the solder joint reliability. Differential impact speed and room temperature aging effect has been studied with Ni/Au substrate. Furthermore, two different solder alloys (96.5Sn-3Ag-0.5Cu, 98.5Sn-1Ag-0.5C) and three different reflow profiles are considered. This paper focuses on failure mode analysis and investigates the failure characteristics of lead-free solder joints, 96.5Sn-3Ag-0.5Cu and 98.5Sn-1Ag- 0.5C, which are aging at room temperature, respectively, then those solder are impacted at shear rates of 0.3 m/s and 1.0 m/s. Four types of failure mode are found in this high speed impact testing result. Mode M1 is the fracture around the interface but not remain the solder on pad. Mode M2 is fracture around the interface and remained the solder on pad. Mode M3 is fracture across the solder ball. Mode M4 is fracture on the substrate with lift the pad. The aging time could increase the interfacial strength, therefore the percentage of M3 and M4 mode failures increases in Ni/Au substrate. According the results, we find that in reflow profile A and reflow profile C, the failure percentage of Mode M2 is increasing; in reflow profile B, the failure percentage of Mode M3 and Mode M4 are large than Mode M1 and Mode M2.The failure mode M2 is the majority in solder alloy 96.5Sn-3Ag- 0.5Cu, and the failure mode M2 and M3 are the majority in solder alloy 98.5Sn-1Ag-0.5C.
本研究的目的是研究无铅焊料在高速冲击下的力学行为。建立了高速冲击试验来测试焊点的可靠性。研究了镍/金基体的不同冲击速度和室温时效效应。此外,还考虑了两种不同的钎料合金(96.5Sn-3Ag-0.5Cu, 98.5Sn-1Ag-0.5C)和三种不同的回流曲线。本文对96.5Sn-3Ag-0.5Cu无铅焊点和98.5Sn-1Ag- 0.5C无铅焊点进行了失效模式分析,研究了在室温时效过程中,以0.3 m/s和1.0 m/s剪切速率冲击无铅焊点的失效特征。在高速冲击试验结果中发现了四种失效模式。模式M1是界面周围的断裂,但焊盘上的焊料不保留。模式M2是在界面周围断裂,焊盘上保留焊料。模式M3是通过焊料球的断裂。模式M4是基板上的断裂与提升垫。时效时间增加了Ni/Au基体的界面强度,导致M3和M4模式失效的比例增加。结果表明,在回流曲线A和回流曲线C中,M2模式的失效率逐渐增大;在回流剖面B中,M3和M4模式的失效率大于M1和M2模式。96.5Sn-3Ag- 0.5Cu钎料合金中失效模式M2居多,98.5Sn-1Ag-0.5C钎料合金中失效模式M2和M3居多。
{"title":"Failure mode analysis of lead-free solder joints under differential reflow profiles by high speed impact testing","authors":"C.Y. Lin, Y. Chen, G. Shen, D. Liu, C. Kuo, C.L. Hsu","doi":"10.1109/ICEPT.2008.4607136","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607136","url":null,"abstract":"The aim of this research is to investigate the mechanical behavior of lead-free solder for high speed impact. A high speed impact test was set up to measure the solder joint reliability. Differential impact speed and room temperature aging effect has been studied with Ni/Au substrate. Furthermore, two different solder alloys (96.5Sn-3Ag-0.5Cu, 98.5Sn-1Ag-0.5C) and three different reflow profiles are considered. This paper focuses on failure mode analysis and investigates the failure characteristics of lead-free solder joints, 96.5Sn-3Ag-0.5Cu and 98.5Sn-1Ag- 0.5C, which are aging at room temperature, respectively, then those solder are impacted at shear rates of 0.3 m/s and 1.0 m/s. Four types of failure mode are found in this high speed impact testing result. Mode M1 is the fracture around the interface but not remain the solder on pad. Mode M2 is fracture around the interface and remained the solder on pad. Mode M3 is fracture across the solder ball. Mode M4 is fracture on the substrate with lift the pad. The aging time could increase the interfacial strength, therefore the percentage of M3 and M4 mode failures increases in Ni/Au substrate. According the results, we find that in reflow profile A and reflow profile C, the failure percentage of Mode M2 is increasing; in reflow profile B, the failure percentage of Mode M3 and Mode M4 are large than Mode M1 and Mode M2.The failure mode M2 is the majority in solder alloy 96.5Sn-3Ag- 0.5Cu, and the failure mode M2 and M3 are the majority in solder alloy 98.5Sn-1Ag-0.5C.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"30 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87103609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A novel high effective envelope-tracking amplifier for OFDM systems 一种新型的高效OFDM系统包络跟踪放大器
Yingliang Li, Jide-Zhao
OFDM (orthogonal frequency division multiplex) mobile communication system is so popular in recent because it has so many virtues as effective frequency spectrum, wide-band, high speed rate, etc. But it has so many challenges in technical field, such as the high efficiency of PA (power amplifier) and linearity. RF (radio frequency) amplifier with ET (envelop-tracing) structure is described for OFDM systems in this paper. The first study the ET amplifier model, and then a high-efficiency OFDM amplifier is presented with GaN HEMT (heterostrucutre field-effect transistors), and includes the theoretic analysis and circuit design. Finally, the design circuit is simulated by ADS (advanced design systems) software, and gets the average DE (drains efficiency) of the amplifier is as high as 50% for an OFDM (Wimax) modulated signal with EVM of 2.94% at an average output power of 50 W and gain of 13.0 dB from simulating result. The design has good efficiency and linearity. All of these performances are satisfied with the OFDM systempsilas requirement of RF. This design may be applied for the OFDM systems compare with the standard of OFDM.
OFDM (orthogonal frequency division multiple,正交频分复用)移动通信系统因其具有有效频谱、宽带、高速率等优点而受到近年来的广泛应用。但它在技术领域面临着诸多挑战,如功率放大器的高效率和线性度。介绍了一种用于OFDM系统的ET结构射频放大器。首先对ET放大器模型进行了研究,然后提出了一种采用GaN HEMT(异质结构场效应晶体管)的高效OFDM放大器,包括理论分析和电路设计。最后,利用ADS (advanced design systems)软件对设计电路进行仿真,仿真结果表明,对于EVM为2.94%的OFDM (Wimax)调制信号,在平均输出功率为50 W,增益为13.0 dB的情况下,放大器的平均DE(漏极效率)高达50%。该设计具有良好的效率和线性度。所有这些性能都满足了OFDM系统对射频的要求。与OFDM标准相比,本设计可应用于OFDM系统。
{"title":"A novel high effective envelope-tracking amplifier for OFDM systems","authors":"Yingliang Li, Jide-Zhao","doi":"10.1109/ICEPT.2008.4607026","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607026","url":null,"abstract":"OFDM (orthogonal frequency division multiplex) mobile communication system is so popular in recent because it has so many virtues as effective frequency spectrum, wide-band, high speed rate, etc. But it has so many challenges in technical field, such as the high efficiency of PA (power amplifier) and linearity. RF (radio frequency) amplifier with ET (envelop-tracing) structure is described for OFDM systems in this paper. The first study the ET amplifier model, and then a high-efficiency OFDM amplifier is presented with GaN HEMT (heterostrucutre field-effect transistors), and includes the theoretic analysis and circuit design. Finally, the design circuit is simulated by ADS (advanced design systems) software, and gets the average DE (drains efficiency) of the amplifier is as high as 50% for an OFDM (Wimax) modulated signal with EVM of 2.94% at an average output power of 50 W and gain of 13.0 dB from simulating result. The design has good efficiency and linearity. All of these performances are satisfied with the OFDM systempsilas requirement of RF. This design may be applied for the OFDM systems compare with the standard of OFDM.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"16 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89132220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High speed package design and electrical performance analysis 高速封装设计及电气性能分析
Shu-Qiang Zhang, Hung-Hsiang Cheng, Yin-Guang Zheng, Chang-Lin Yeh
More and more high-speed data transmission formats such as rapid IO, hyper transport, Gigabit Ethernet, Serial ATA etc. are becoming prevalent. As substrate interconnection density and channel data rate are getting increasingly higher, various 3D effects, crosstalk, and discontinuity - induced ISI are playing a much more important role, for both signal channels and power distribution networks . The substrate interconnection structures are becoming the major bandwidth constraint for most of the package designer. As data rates continue to increase, transitioning to solder bump or Au stud bump flip-chip interconnects or low-loss substrate materials results in excessive cost. It is therefore increasingly important to provide a high performance and low-cost packaging solution. The aim of this paper is to proposal a design solution of normal plastic ball grid array (PBGA) package for high speed devices. The electrical simulation method of the effects of variation of package design parameters such as signal path structure, wire bonding, through hole via, ball placement tactic and plating stub are highlighted. The conclusion of this paper is recommendation for high-speed package electrical design.
快速IO、超高速传输、千兆以太网、串行ATA等高速数据传输格式越来越流行。随着衬底互连密度和信道数据速率的不断提高,各种三维效应、串扰和不连续诱发的ISI对信号通道和配电网络都起着越来越重要的作用。基板互连结构正成为大多数封装设计师的主要带宽限制。随着数据速率的不断增加,过渡到焊接凸点或金螺柱凸点倒装芯片互连或低损耗基板材料会导致成本过高。因此,提供高性能和低成本的包装解决方案变得越来越重要。本文的目的是提出一种用于高速器件的普通塑料球栅阵列(PBGA)封装设计方案。重点介绍了信号通路结构、导线键合、通孔通孔、球体放置策略和镀段等封装设计参数变化对其影响的电学仿真方法。本文的结论对高速封装电气设计具有一定的参考价值。
{"title":"High speed package design and electrical performance analysis","authors":"Shu-Qiang Zhang, Hung-Hsiang Cheng, Yin-Guang Zheng, Chang-Lin Yeh","doi":"10.1109/ICEPT.2008.4606973","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4606973","url":null,"abstract":"More and more high-speed data transmission formats such as rapid IO, hyper transport, Gigabit Ethernet, Serial ATA etc. are becoming prevalent. As substrate interconnection density and channel data rate are getting increasingly higher, various 3D effects, crosstalk, and discontinuity - induced ISI are playing a much more important role, for both signal channels and power distribution networks . The substrate interconnection structures are becoming the major bandwidth constraint for most of the package designer. As data rates continue to increase, transitioning to solder bump or Au stud bump flip-chip interconnects or low-loss substrate materials results in excessive cost. It is therefore increasingly important to provide a high performance and low-cost packaging solution. The aim of this paper is to proposal a design solution of normal plastic ball grid array (PBGA) package for high speed devices. The electrical simulation method of the effects of variation of package design parameters such as signal path structure, wire bonding, through hole via, ball placement tactic and plating stub are highlighted. The conclusion of this paper is recommendation for high-speed package electrical design.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"53 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84707920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dynamic bending tests and numerical simulation of board level electronic package 板级电子封装动态弯曲试验及数值模拟
Q. Fei, Wang Yngve, Liu Bin, An Tong, J. Ling
4-point dynamic bending tests of board level electronic packages were carried out in order to investigate the reliability of solder joints. A high speed camera and the digital image correlation method were used to measure the deflection of the PCB board. A finite element model to simulate the test was built up and was validated by the test data. A parameter study was subsequently implemented. The results show that at certain value of PCB stiffness the peeling stress reaches its peak. The package installation angel has significant effect on the peeling stress of the solder joints.
为了研究板级电子封装焊点的可靠性,对其进行了四点动态弯曲试验。采用高速摄像机和数字图像相关法测量PCB板的挠度。建立了模拟试验的有限元模型,并通过试验数据进行了验证。随后进行了参数研究。结果表明,当PCB板刚度达到一定值时,剥离应力达到峰值。封装安装角度对焊点的剥落应力有显著影响。
{"title":"Dynamic bending tests and numerical simulation of board level electronic package","authors":"Q. Fei, Wang Yngve, Liu Bin, An Tong, J. Ling","doi":"10.1109/ICEPT.2008.4606969","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4606969","url":null,"abstract":"4-point dynamic bending tests of board level electronic packages were carried out in order to investigate the reliability of solder joints. A high speed camera and the digital image correlation method were used to measure the deflection of the PCB board. A finite element model to simulate the test was built up and was validated by the test data. A parameter study was subsequently implemented. The results show that at certain value of PCB stiffness the peeling stress reaches its peak. The package installation angel has significant effect on the peeling stress of the solder joints.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"16 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88190920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
期刊
2008 International Conference on Electronic Packaging Technology & High Density Packaging
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