Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10−3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response

Cheng‐Ming Lin, Hung-Chih Chang, Yen‐Ting Chen, I-Hsieh Wong, H. Lan, S. Luo, Jing-Yi Lin, Y.-J. Tseng, Cheewee Liu, C. Hu, Fu-Liang Yang
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引用次数: 21

Abstract

0.39-nm ultrathin EOT ZrO2 having κ value as high as ~43 without an interfacial layer (IL) is demonstrated on Ge substrates. The EOT and gate leakage are much lower than the recent reported data [1]. In situ NH3/H2 remote plasma treatment (RPT) after RTO-grown ultrathin (<;1nm) GeO2/Ge and prior to PEALD ZrO2 leads to the formation of tetragonal phase ZrO2 and the inhibition of GeOx IL regrowth. As the number of RPT cycles increases, it is observed that not only higher [N] but more GeO2 component formed on Ge surface. GeO diffuses into ZrO2 layer via the interface reaction (Ge+GeO2 → 2GeO) and stabilize the tetragonal phase ZrO2. The gate dielectric has a leakage current ~104X lower than other reported dielectrics in this EOT region. Ge (001) pMOSFET has low SS of 85 mV/dec and high Ion/Ioff of ~6×105 at Vd= -1V, while nMOSFET has SS of 90 mV/dec and Ion/Ioff of ~1×105 at Vd=1V. The peak electron mobility is determined by the remote phonon scattering stemming from the high-κ value. The biaxial tensile strain of ~0.04% applied on Ge (111) nMOSFET with an EOT=0.78nm produces a 4.8% drain current enhancement along the <;110> channel.
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Ge上的无界面ZrO2具有0.39 nm EOT, κ ~ 43, ~ 2×10−3 A/cm2栅极漏,SS =85 mV/dec, Ion/Ioff =6×105,高应变响应
在Ge衬底上制备了κ值高达~43的0.39 nm超薄EOT ZrO2,无界面层(IL)。EOT和栅极泄漏远低于最近报道的数据[1]。在rto生长超薄(2/Ge)后和PEALD ZrO2之前,原位NH3/H2远程等离子体处理(RPT)导致四方相ZrO2的形成和对GeOx IL再生的抑制。随着RPT循环次数的增加,在Ge表面不仅形成了更高的[N],而且形成了更多的GeO2组分。GeO通过界面反应(Ge+GeO2→2GeO)扩散到ZrO2层中,稳定了ZrO2的四方相。在该EOT区域,栅介质的泄漏电流比其他已报道的介质低104X。Ge (001) pMOSFET在Vd= -1V时SS低,为85 mV/dec,离子/ off高,为~6×105,而nMOSFET在Vd=1V时SS为90 mV/dec,离子/ off为~1×105。电子迁移率的峰值由高κ值引起的远端声子散射决定。在EOT=0.78nm的Ge (111) nMOSFET上施加~0.04%的双轴拉伸应变,沿沟道产生4.8%的漏极电流增强。
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