Reliable microjoints for chip stacking formed by solid-liquid interdiffusion (SLID) bonding

Tao-Chih Chang, Ren-Shin Cheng, K. Kao, Wei Li, Ching-Kuan Lee, Jing-Yao Chang, Shin-Yi Huang, Chia-Wen Fan, Yin-Po Hung, Yu-wei Huang, Yu-Min Lin, Tai-Hong Chen, F. Leu, S. Fun, W. Lo
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引用次数: 5

Abstract

In this research, thousands of 20 μm pitch microbumps with a diameter of 10 μm and a structure of pure Sn cap on Cu pillar were electroplated on 8 inch wafers, and those wafers were then respectively singularized to be top chip (5 mm × 5 mm) and bottom Si interposer (10 mm × 10 mm) for stacking. Two methods including conventional reflow and solid-liquid interdiffusion (SLID) bonding were chosen to interconnect the microbumps on the chip and on the interposer. In the former case, the as-plated Sn caps were fluxed with Senju Metal's WF-6400 paste, and the chip was then placed on a Si interposer using a SÜSS FC-150 bonder at room temperature. Afterwards, the Sn caps on the chip and on the Si interposer were melted and interconnected at a peak temperature of 250°C in an ERSA's reflow oven (Hotflow 7). The flux residues were cleaned after reflow, and the microgap between the chip and the Si interposer were fully sealed by a Namics' capillary underfill with an average filler size of 0.3 um. Regarding the SLID bonding, the oxides on the as-plated Sn caps were removed by a plasma etcher first, and then the chip was placed on the interposer by the SÜSS FC-150 bonder as well, subsequently, the Sn caps were heated up to 260°C to react with Cu to form Cu6Sn5 completely. In the final, the intermetallic microjoints were also protected by the same capillary underfill. After assembling, the JEDEC preconditioning test was used to screen the test vehicles for reliability assessment, and then a temperature cycling test was performed to predict the lifespan of the microjoints. The test results showed that the microjoints formed by SLID bonding provided a superior reliability performance to those assembled by reflow. According to the images of focus ion beam (FIB), the intermetallic phases of Cu6Sn5 and Cu3Sn coexisted at the interface between the Sn cap and the Cu pillar after reflow once, and some Kirkendall voids were found at the Cu3Sn / Cu pillar interface concurrently. When the microjoints undergone 3 times more reflow in the preconditioning test, the Kirkendall voids accumulated and was going to speed up the failure of microjoints as experienced just hundreds of temperature cycles. On the other hand, the microjoints produced by SLID bonding have not failed when thousands of temperature cycles passed. Based on those evidences, it is claimed here that SLID is an efficient bonding method to form reliable intermetallic microjoints for chip stacking.
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通过固液互扩散键合形成可靠的芯片堆叠微接头
在8英寸硅片上电镀了数千个直径为10 μm、间距为20 μm的微凸点和纯锡盖覆铜柱结构,并分别将其奇点化为顶部芯片(5 mm × 5 mm)和底部硅中间层(10 mm × 10 mm)进行堆叠。采用常规回流焊和固液互扩散焊两种方法对芯片和中间层上的微凸点进行互连。在前一种情况下,镀锡帽用Senju Metal的WF-6400浆料焊剂,然后在室温下使用SÜSS FC-150粘结剂将芯片放置在Si中间体上。然后,在ERSA的回流炉(Hotflow 7)中,将芯片上的锡帽和硅中间层上的锡帽熔化并在250°C的峰值温度下互连。回流后清洗焊剂残留物,芯片和硅中间层之间的微间隙被Namics的毛细管下填料完全密封,填料的平均尺寸为0.3 um。对于滑动键合,首先用等离子蚀刻机除去镀锡帽上的氧化物,然后用SÜSS FC-150键合器将芯片置于中间层上,然后将锡帽加热至260℃与Cu完全反应生成Cu6Sn5。最后,金属间微节理也同样受到毛细充填物的保护。装配完成后,采用JEDEC预调节试验对试验车辆进行可靠性评估,然后进行温度循环试验对微关节寿命进行预测。试验结果表明,与回流焊相比,滑动焊形成的微接头具有更好的可靠性。从聚焦离子束(FIB)图像可以看出,回流一次后,在Sn帽与Cu柱界面处存在Cu6Sn5和Cu3Sn的金属间相共存,并且在Cu3Sn / Cu柱界面处同时存在Kirkendall空洞。预处理试验中,当微关节经历3倍以上的回流时,Kirkendall空洞的积累将加速微关节的破坏,而温度循环仅为数百次。另一方面,通过滑动键合产生的微接头在经过数千个温度循环后仍未失效。基于这些证据,本文认为,滑移是一种有效的键合方法,可以形成可靠的金属间微接头进行芯片堆积。
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