Antimony-doped dendritic web silicon solar cells

D. Meier, J. Spitznagel, J. Greggi, R. Campbell
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引用次数: 3

Abstract

Antimony has been explored as a dopant in dendritic web silicon in an attempt to achieve uniformity in resistivity through the thickness and along the length of the web ribbon, and to inhibit the formation of deleterious oxide precipitates. The desired uniformity was achieved, making possible the fabrication of efficient, n-base bifacial cells using high-resistivity (10-100 Omega -cm) web and the growth of web over long periods of time (five days) without replenishing the dopant in the melt. Antimony-doped web cells were fabricated with measured hole diffusion lengths up to 333 mu m and hole lifetimes up to 66 mu s. Such diffusion lengths significantly exceed the typical web thickness (100-125 mu m), thereby satisfying an important requirement for high-efficiency cells. Web cell efficiencies up to 16.7% were measured. It is concluded that the superior electrical properties obtained for some cells may be associated more with appropriate growth conditions (few dislocations) than with the action of antimony in inhibiting the formation of SiO/sub x/ precipitates.<>
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掺锑树突状网状硅太阳能电池
在树突网状硅中,锑作为掺杂剂进行了探索,试图通过厚度和沿网状带的长度实现电阻率的均匀性,并抑制有害氧化物沉淀的形成。实现了所需的均匀性,使得使用高电阻率(10-100 Omega -cm)的网状结构制造高效的n基双面电池成为可能,并且网状结构的生长需要很长一段时间(5天),而无需补充熔体中的掺杂剂。制备的掺锑网状电池的孔扩散长度可达333 μ m,孔寿命可达66 μ s,这种扩散长度大大超过了典型的网状厚度(100-125 μ m),从而满足了高效电池的重要要求。网络电池效率高达16.7%。由此得出结论,某些细胞的优异电学性能可能更多地与适当的生长条件(很少的位错)有关,而不是与锑抑制SiO/sub x/沉淀形成的作用有关
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