E. Karl, Z. Guo, Y. Ng, J. Keane, U. Bhattacharya, K. Zhang
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引用次数: 31
Abstract
Increasing process variation in advanced technology nodes requires sustained process and circuit innovation to meet yield, performance and margin requirements for SRAM memories. Memory assist circuits are becoming an important tool in co-developing critical scaled memory solutions and can have significant impact on process optimization, as well as power consumption, minimum operating voltage and performance of memories.
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