C. Yeh, W. Chien, R. Bruce, H. Cheng, I. Kuo, C. Yang, A. Ray, H. Miyazoe, W. Kim, F. Carta, E. Lai, M. BrightSky, H. Lung
{"title":"High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory","authors":"C. Yeh, W. Chien, R. Bruce, H. Cheng, I. Kuo, C. Yang, A. Ray, H. Miyazoe, W. Kim, F. Carta, E. Lai, M. BrightSky, H. Lung","doi":"10.1109/VLSIT.2018.8510621","DOIUrl":null,"url":null,"abstract":"For the first time published, high endurance OTS (ovonic threshold switch, here, TeAsGeSiSe-based) is integrated with PCM (here, doped Ge2Sb2Te5) to form a 3D stackable pillar type device. With the help of an etch buffer layer and a damage-free pillar RIE process, we achieved 100% array yield without OTS/PCM composition modification. Anneal tests show this one-selector/one-resistor (1S1R) pillar device is BEOL-compatible.We report excellent electrical performance by 1S1R OTS-PCM device; selector provides the fast turn on/off speed which enables 10ns fast RESET speed, program endurance is 109 cycles, and read endurance is higher than 1011 cycles.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"418 1","pages":"205-206"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510621","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
For the first time published, high endurance OTS (ovonic threshold switch, here, TeAsGeSiSe-based) is integrated with PCM (here, doped Ge2Sb2Te5) to form a 3D stackable pillar type device. With the help of an etch buffer layer and a damage-free pillar RIE process, we achieved 100% array yield without OTS/PCM composition modification. Anneal tests show this one-selector/one-resistor (1S1R) pillar device is BEOL-compatible.We report excellent electrical performance by 1S1R OTS-PCM device; selector provides the fast turn on/off speed which enables 10ns fast RESET speed, program endurance is 109 cycles, and read endurance is higher than 1011 cycles.
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