L. Larcher, A. Padovani, O. Pirrotta, L. Vandelli, G. Bersuker
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引用次数: 52
Abstract
In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Forming set and reset processes are studied using a model including power dissipation associated with the charge transport, and the corresponding temperature increase, which assists ion diffusion.
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