Evaluation and characterization of (ZnSiAs/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/ for photovoltaic device applications
F. Hasoon, A. Al-Douri, A. Al-Foadi, M. Alias, A. Swartzlander, F. Abou-Elfotouh, A. Nelson, R. F. Fisher, R. Dhere, S. Asher, L. Kazmerski
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引用次数: 0
Abstract
A determination of the properties of two alloy semiconductors, (ZnSiAsd/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/, is presented for use in potential photovoltaic device applications. The methods of preparation and processing of single-crystals are reported. Compositional, structural, chemical, and electrooptical parameters are documented. Some emphasis is placed on the properties of the x=0.5 materials, which have bandgaps of 1.88 and 0.80 eV for (ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ and (CuInSe/sub 2/)/sub 0.5/(2InAs)/sub 0.5/, respectively. Preliminary data on CdS/(ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ cell structures are presented to demonstrate the device feasibility of this semiconductor.<>
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