M.Y. Yang, S.B. Chen, A. Chin, C. Sun, B. Lan, S. Chen
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引用次数: 5
Abstract
We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O/sub 3/ (PZT), SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT), and Bi/sub 3.75/La/sub 0.25/Ti/sub 3/O/sub 12/ (BLT)/40 /spl Aring/-Al/sub 2/O/sub 3/ gate dielectrics. The SBT/Al/sub 2/O/sub 3/ FeMOSFET has the largest I/sub ON//I/sub OFF/ of greater than 2 orders of magnitude, and the PZT/Al/sub 2/O/sub 3/ FeMOSFET has the fast 10 ns program/erase time, >10/sup 11/ program/erase endurance, and 10 years retention.
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