P. Iles, K. I. Chang, K. S. Ling, C. Chu, J. Wise, R. Morris
{"title":"ASEC/Air Force LIPS-3 test panel results","authors":"P. Iles, K. I. Chang, K. S. Ling, C. Chu, J. Wise, R. Morris","doi":"10.1109/PVSC.1988.105820","DOIUrl":null,"url":null,"abstract":"Preorbit and in-orbit test panel results are presented. The test panel contained three types of solar cell: GaAs/Ge, GaAs, and silicon. The test results showed anomalies in tracking the cell performance in ground tests and into orbit. There was also in-orbit degradation greater than that expected from the radiation models used for the LIPS-3 orbit. With these reservations, the GaAs/Ge cell performance confirmed recent advances in explaining the electrical performance of these cells. Both the GaAs/Ge and GaAs cells have deeper p-n junction depths than current cells, and this probably caused some of the in-orbit degradation. For the silicon cells, the in-orbit degradation was greater than expected for their design and may have been affected by mechanical factors in panel assembly or mounting on the satellite.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"64 1","pages":"826-830 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105820","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Preorbit and in-orbit test panel results are presented. The test panel contained three types of solar cell: GaAs/Ge, GaAs, and silicon. The test results showed anomalies in tracking the cell performance in ground tests and into orbit. There was also in-orbit degradation greater than that expected from the radiation models used for the LIPS-3 orbit. With these reservations, the GaAs/Ge cell performance confirmed recent advances in explaining the electrical performance of these cells. Both the GaAs/Ge and GaAs cells have deeper p-n junction depths than current cells, and this probably caused some of the in-orbit degradation. For the silicon cells, the in-orbit degradation was greater than expected for their design and may have been affected by mechanical factors in panel assembly or mounting on the satellite.<>