T. Kurusu, H. Tanimoto, M. Wada, A. Isobayashi, A. Kajita, N. Aoki, Y. Toyoshima
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引用次数: 1
Abstract
The effect of Line-Edge Roughness (LER) on electrical resistance in nanoscale Cu wires is investigated utilizing a semi-classical Monte Carlo method for simulating electron transport in metallic wires. Dependence of parameters characterizing LER such as amplitude, correlation length, and correlation between line-edges on electrical resistance is presented, and an optimal wire structure to suppress resistance degradation due to LER/LWR is discussed.
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