Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Rui Zhang, Po-Chin Huang, Ju-Chin Lin, M. Takenaka, S. Takagi
{"title":"Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces","authors":"Rui Zhang, Po-Chin Huang, Ju-Chin Lin, M. Takenaka, S. Takagi","doi":"10.1109/IEDM.2012.6479051","DOIUrl":null,"url":null,"abstract":"Hall measurements have been carried out for the Ge p-and n-MOSFETs with different substrate orientations and GeO<sub>x</sub>/Ge interface qualities. It is found that the significant reduction of effective mobility in high surface carrier concentration (N<sub>s</sub>) or high normal field in Ge MOSFETs is attributed partly to the N<sub>s</sub> loss due to large amounts of interface states inside the valence and conduction bands of Ge. The GeO<sub>x</sub>/Ge interface roughness is another reason limiting the high N<sub>s</sub> mobility. It has been revealed that room temperature plasma post oxidation can realize Al<sub>2</sub>O<sub>3</sub>/GeO<sub>x</sub>/Ge gate stacks with atomically-flat GeO<sub>x</sub>/Ge interfaces. Ge MOSFETs with these interfaces have provided record high effective hole and electron mobility, which overcome the Si universal mobility in both low and high N<sub>s</sub> regions.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"104 1","pages":"16.1.1-16.1.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22

Abstract

Hall measurements have been carried out for the Ge p-and n-MOSFETs with different substrate orientations and GeOx/Ge interface qualities. It is found that the significant reduction of effective mobility in high surface carrier concentration (Ns) or high normal field in Ge MOSFETs is attributed partly to the Ns loss due to large amounts of interface states inside the valence and conduction bands of Ge. The GeOx/Ge interface roughness is another reason limiting the high Ns mobility. It has been revealed that room temperature plasma post oxidation can realize Al2O3/GeOx/Ge gate stacks with atomically-flat GeOx/Ge interfaces. Ge MOSFETs with these interfaces have provided record high effective hole and electron mobility, which overcome the Si universal mobility in both low and high Ns regions.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
决定Ge p-和n- mosfet在高Ns区迁移率的物理机制以及原子平面GeOx/Ge界面对迁移率的改善
对具有不同衬底取向和gex /Ge接口质量的Ge p-和n- mosfet进行了霍尔测量。研究发现,在高表面载流子浓度(Ns)或高法向场下,Ge mosfet的有效迁移率显著降低,部分原因是由于Ge的价带和导带内大量的界面态导致了Ns的损失。GeOx/Ge界面粗糙度是限制高Ns迁移率的另一个原因。结果表明,室温等离子体后氧化可以实现具有原子平面的GeOx/Ge界面的Al2O3/GeOx/Ge栅极叠层。具有这些界面的Ge mosfet提供了创纪录的高效空穴和电子迁移率,克服了Si在低和高Ns区域的普遍迁移率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
On the degradation of field-plate assisted RESURF power devices Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires Design and performance of pseudo-spin-MOSFETs using nano-CMOS devices MOSFET performance and scalability enhancement by insertion of oxygen layers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1