Ultra low power design and future device interactions

A. Amerasekera, C. Bittlestone
{"title":"Ultra low power design and future device interactions","authors":"A. Amerasekera, C. Bittlestone","doi":"10.1109/IEDM.2012.6478972","DOIUrl":null,"url":null,"abstract":"We present the interactions between the process technology and the design that set the requirements for ultra low power and mixed signal circuits and chips that form the basis of the next generations of semiconductor applications.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"4 1","pages":"3.4.1-3.4.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6478972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We present the interactions between the process technology and the design that set the requirements for ultra low power and mixed signal circuits and chips that form the basis of the next generations of semiconductor applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
超低功耗设计和未来设备交互
我们介绍了工艺技术和设计之间的相互作用,这些设计为超低功耗和混合信号电路和芯片设定了要求,这些电路和芯片构成了下一代半导体应用的基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
On the degradation of field-plate assisted RESURF power devices Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires Design and performance of pseudo-spin-MOSFETs using nano-CMOS devices MOSFET performance and scalability enhancement by insertion of oxygen layers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1