K. Oda, E. Ohue, I. Suzumura, R. Hayami, A. Kodama, H. Shimamoto, K. Washio
{"title":"Self-aligned selective-epitaxial-growth Si/sub 1-x-y/Ge/sub x/C/sub y/ HBT technology featuring 170-GHz f/sub max/","authors":"K. Oda, E. Ohue, I. Suzumura, R. Hayami, A. Kodama, H. Shimamoto, K. Washio","doi":"10.1109/IEDM.2001.979505","DOIUrl":null,"url":null,"abstract":"Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"1 1","pages":"15.2.1-15.2.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
