Leadless IC package with a substrate produced by copper/nickel/copper-3-layer-clad material

H. Okayama, K. Nanbu, T. Kurokawa, Takashi Koushiro
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Abstract

Terminal units such as mobile phones, portable game systems and electronic books, have spread all over the world and advanced to be smaller, more lightweight and thinner every moment. Simultaneously, the inner electronic parts such as batteries, IC packages and connectors were also smaller and thinner. For example, in order to reduce the occupied area and space on the printed circuit board (PCB), some lead flame type IC packages such as SOP(Small Outline Package) and QFP(Quad Flat Package) have changed to leadless type ones such as SON(Small Outline Non-lead), QFN(Quad Flat Non-lead) and LGA. (Land Grid Array) The substrates of such leadless IC packages are usually made of a single metal plate such as a copper, a copper alloy and a nickel and conventionally produced through etching process or plating process. So the designs for the package like the size, the number of terminal and the total thickness are limited. In order to solve such problems, we developed a new manufacturing method, using clad materials which rolled copper (Cu) foil and nickel (Ni) plating layer on electrolysis Cu foil were laminated. In detail, the components were consisting of 18μm to 35μm thickness Cu foil with about 1 um thickness Ni plating layer and around 100μm thickness rolled Cu sheet (Cu/Ni/Cu material). These materials are characterized by the cladding interface between the rolled Cu foil and the Ni plating layer on the electrolysis Cu foil, which is bonded by the surface activated bonding (SAB) method [1, 2, 3]. Namely, the interface is so flat that it is suitable to use for selective etching work [4, 5]. In this paper, we would like to introduce the new IC package manufacturing process with the Cu/Ni/Cu material. This method makes some new package designs possible and achieves high productivity when comparing to the conventional method. We produced various leadless IC packages with the total thickness of 0.25mm to 0.5mm, with the number of 3 to 460 terminals at 1 row to 4 rows for terminals by means of this new method. In addition, in order to evaluate the package performance, we made the package with the total thickness of 0.43mm, with 164 terminals of diameter of 0.25mm at 3 rows and the terminal pitch of 0.5mm. In this sample, heat-tolerance by the solder reflow test with the pre-condition of JEDEC (Joint Electron Device Engineering Council) standard of level 3 was estimated and the package warpage in the range of 25 to 260 degrees Celsius was measured. As the results, the package sample could pass the reflow test of the JEDEC level 3 and the warp of the package was less than 50μm.
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采用铜/镍/铜-3层包覆材料制作基板的无铅IC封装
终端设备,如手机、便携式游戏系统和电子书,已经遍布世界各地,每一刻都在向更小、更轻、更薄的方向发展。同时,电池、IC封装、连接器等内部电子部件也变得更小、更薄。例如,为了减少印刷电路板(PCB)上的占地面积和空间,一些铅火焰型IC封装如SOP(Small Outline Package)和QFP(Quad Flat Package)已改为SON(Small Outline Non-lead)、QFN(Quad Flat Non-lead)和LGA等无铅型IC封装。这种无引线IC封装的基板通常由铜、铜合金和镍等单一金属板制成,通常通过蚀刻工艺或电镀工艺生产。因此,封装的尺寸、端子数量和总厚度等设计都受到限制。为了解决这些问题,我们开发了一种新的制造方法,采用复合材料将轧制铜(Cu)箔和镀镍(Ni)层在电解铜箔上进行层合。该组件由厚度为18μm ~ 35μm的铜箔和厚度约为1 μm的镀镍层以及厚度约为100μm的轧制铜片(Cu/Ni/Cu材料)组成。这些材料的特点是轧制后的Cu箔与电解后的Cu箔上镀镍层之间存在包覆界面,采用表面活化键合(SAB)方法进行键合[1,2,3]。也就是说,界面非常平坦,适合用于选择性蚀刻工作[4,5]。在本文中,我们将介绍用Cu/Ni/Cu材料制造集成电路封装的新工艺。该方法使一些新的封装设计成为可能,并且与传统方法相比,实现了更高的生产率。利用这种新方法,我们生产了各种总厚度为0.25mm至0.5mm, 1排至4排端子数为3至460个的无引线IC封装。此外,为了评估封装性能,我们制作了总厚度为0.43mm的封装,采用164根直径为0.25mm的3排端子,端子间距为0.5mm。本样品在JEDEC(联合电子器件工程委员会)3级标准的前提条件下,通过焊料回流试验估计了耐热性,并测量了25至260摄氏度范围内的封装翘曲。结果表明,该封装样品能够通过JEDEC 3级回流测试,且封装的翘曲度小于50μm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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