{"title":"Band discontinuity and bulk vs. interface recombination in CdS/CuInSe/sub 2/ solar cells","authors":"G. Turner, R. J. Schwartz, J. Gray","doi":"10.1109/PVSC.1988.105951","DOIUrl":null,"url":null,"abstract":"A numerical model which shows the effects of conduction band discontinuity, Delta /sub cb/, in CdS/CuInSe/sub 2/ solar cells is presented. Two scenarios for the dominant mechanism controlling open-circuit voltage, V/sub oc/, are considered: CuInSe/sub 2/ bulk recombination and CdS/CuInSe/sub 2/ interface recombination. The computation shows that the short-circuit current is independent of Delta /sub cb/ for either scenario, while V/sub oc/ is strongly affected only for the interface-dominated case and only for the CuInSe/sub 2/ conduction band positive with respect to the CdS conduction band. The experimental evidence implies that interface domination is not always the case in real devices, if it occurs at all.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"1457-1460 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A numerical model which shows the effects of conduction band discontinuity, Delta /sub cb/, in CdS/CuInSe/sub 2/ solar cells is presented. Two scenarios for the dominant mechanism controlling open-circuit voltage, V/sub oc/, are considered: CuInSe/sub 2/ bulk recombination and CdS/CuInSe/sub 2/ interface recombination. The computation shows that the short-circuit current is independent of Delta /sub cb/ for either scenario, while V/sub oc/ is strongly affected only for the interface-dominated case and only for the CuInSe/sub 2/ conduction band positive with respect to the CdS conduction band. The experimental evidence implies that interface domination is not always the case in real devices, if it occurs at all.<>
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