{"title":"Defects in amorphous silicon germanium alloys","authors":"C. Fortmann, J. Tu","doi":"10.1109/PVSC.1988.105675","DOIUrl":null,"url":null,"abstract":"The electrical, optical, and stability properties of the materials in the Si/sub 1-y-x/Ge/sub x/H/sub y/ (0<x<1, 0.05<y<0.13) ternary system were investigated. It is found that the electron mobility lifetime product decreases with increasing x (Ge content) and y (H content). The optical bandgap and the electronic transport properties are found to be a function of both y and x. The stability of the alloys was examined by the characterization of light-induced effects in solar cells. The stability of solar cells appears to be only a function of the hydrogen content. These studies suggest that defects related to both x and y control the electronic transport of annealed materials, while only defects related to y result in light-induced changes. The alloy with the greatest promise for improves solar cell performance and stability is a-Si/sub 0.43/Ge/sub 0.52/H/sub 0.05/ with E/sub g/=1.3 eV.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"27 1","pages":"139-142 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105675","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The electrical, optical, and stability properties of the materials in the Si/sub 1-y-x/Ge/sub x/H/sub y/ (0>
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