Y. Tsuo, Y. Xu, A. Mascarenhas, S. Deb, A. K. Barua
{"title":"Recent results on ion-beam hydrogenation of amorphous silicon","authors":"Y. Tsuo, Y. Xu, A. Mascarenhas, S. Deb, A. K. Barua","doi":"10.1109/PVSC.1988.105670","DOIUrl":null,"url":null,"abstract":"The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation of glow-discharge-deposited a-Si:H, by glow-discharge deposition at 480 degrees C, and by RF magnetron-sputter deposition was investigated. A Kaufman ion source was used to introduce hydrogen atoms into the a-Si:H. Highly photosensitive a-Si:H films with up to 20 at.% hydrogen bonded predominantly as monohydrides were obtained. The authors report results of Raman Scattering measurements of magnetron-sputtering-deposited amorphous silicon before and after hydrogenation, comparisons of ion-beam and RF posthydrogenation techniques, and a possible application of the ion-beam hydrogenation technique.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"119-122 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation of glow-discharge-deposited a-Si:H, by glow-discharge deposition at 480 degrees C, and by RF magnetron-sputter deposition was investigated. A Kaufman ion source was used to introduce hydrogen atoms into the a-Si:H. Highly photosensitive a-Si:H films with up to 20 at.% hydrogen bonded predominantly as monohydrides were obtained. The authors report results of Raman Scattering measurements of magnetron-sputtering-deposited amorphous silicon before and after hydrogenation, comparisons of ion-beam and RF posthydrogenation techniques, and a possible application of the ion-beam hydrogenation technique.<>
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