Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation

Abstract

The impact of current fluctuation due to discreteness in carrier numbers on high-frequency noise amplitudes is numerically investigated, focusing on the comparison to the impact of a single trapped charge in the oxide layer for gate-all-around nanowire structures. The variation in the amount of the charge transporting through the channel within a single clock cycle is estimated. The transported charge variation due to the current fluctuation clearly shows the universality with respect to the total amount of the transported charge. It concludes that the current fluctuation becomes a dominant noise source over 100 GHz range.