J. Mitard, D. Jang, G. Eneman, H. Arimura, B. Parvais, O. Richard, P. Van Marcke, L. Witters, E. Capogreco, H. Bender, R. Ritzenthaler, H. Mertens, A. Hikavyy, R. Loo, H. Dekkers, F. Sebaai, A. Milenin, N. Horiguchi, A. Mocuta, D. Mocuta, N. Collaert
{"title":"An In-depth Study of High-Performing Strained Germanium Nanowires pFETs","authors":"J. Mitard, D. Jang, G. Eneman, H. Arimura, B. Parvais, O. Richard, P. Van Marcke, L. Witters, E. Capogreco, H. Bender, R. Ritzenthaler, H. Mertens, A. Hikavyy, R. Loo, H. Dekkers, F. Sebaai, A. Milenin, N. Horiguchi, A. Mocuta, D. Mocuta, N. Collaert","doi":"10.1109/VLSIT.2018.8510666","DOIUrl":null,"url":null,"abstract":"An in-depth study of scaled nanowire Ge pFETs for digital and analog applications is proposed. Improved device characteristics are first obtained after gaining a good understanding of the HPA on device performance. Up to 45% higher ID,SAT is obtained at IOFF=3nA/fin when comparing to best Si GAA nFET and similar ID,SAT is found when benchmarking to mature 14/16nm pFinFET technology at −0.5 VDD. The temperature dependent study of ID,SAT highlights that the mechanism limiting the transport in Ge at short channel are neither purely diffusive nor fully ballistic.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"17 1","pages":"83-84"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
An in-depth study of scaled nanowire Ge pFETs for digital and analog applications is proposed. Improved device characteristics are first obtained after gaining a good understanding of the HPA on device performance. Up to 45% higher ID,SAT is obtained at IOFF=3nA/fin when comparing to best Si GAA nFET and similar ID,SAT is found when benchmarking to mature 14/16nm pFinFET technology at −0.5 VDD. The temperature dependent study of ID,SAT highlights that the mechanism limiting the transport in Ge at short channel are neither purely diffusive nor fully ballistic.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
