H. Wang, L. Yu, Y. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, M. Dubey, L. Li, J. Kong, T. Palacios
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引用次数: 71
Abstract
2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications.
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