The measurement of bulk and surface recombination by means of modulated free carrier absorption

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105767

F. Sanii, R. J. Schwartz, R.F. Pierret, W. Au

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引用次数: 10

Abstract

A measurement technique is described which makes it possible to monitor the lifetime and surface recombination velocity of the starting wafer as well as a partially or completely processed wafer in the Si solar-cell fabrication process. This technique uses an infrared laser to monitor the carrier concentration via free carrier absorption while periodically exciting free carriers by means of a visible laser. The excited laser is sinusoidally modulated with an electro-optical modulator at frequencies of 100 Hz to 100 kHz. The free carriers generated by the exciter beam attenuate the probe beam, and the resultant output is detected with a phase-sensitive lock-in amplifier. The quantities measured are the amplitude and the phase of the detected signal relative to the exciter beam. The measured data are then fitted to theoretical expressions, and the bulk lifetime and surface recombination velocities are determined. The amplitude and phase are independent quantities, and the computed values from the two sets of data provide a self-consistency test.<>

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用调制自由载流子吸收法测量体积和表面复合

本文描述了一种测量技术，该技术可以监测硅太阳能电池制造过程中起始晶片以及部分或完全加工晶片的寿命和表面复合速度。该技术利用红外激光通过自由载流子吸收来监测载流子浓度，同时利用可见光激光周期性地激发自由载流子。被激发的激光用电光调制器在100赫兹到100千赫的频率上进行正弦调制。激发光束产生的自由载流子使探测光束衰减，由此产生的输出由相敏锁相放大器检测。测量的量是相对于激振器光束的被检测信号的幅度和相位。然后将实测数据拟合为理论表达式，确定了体寿命和表面复合速度。振幅和相位是独立的量，两组数据的计算值提供了自一致性检验。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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