M. Spitzer, J. Dingle, R. Gale, P. Zavracky, M. Boden, D. H. Doyle
{"title":"Gallium arsenide concentrator solar cells with highly stable metallization","authors":"M. Spitzer, J. Dingle, R. Gale, P. Zavracky, M. Boden, D. H. Doyle","doi":"10.1109/PVSC.1988.105840","DOIUrl":null,"url":null,"abstract":"The development of GaAs/AlGaAs double-heterostructure concentrator solar cells for space operation that are capable of surviving 5 min thermal excursions to temperatures well beyond 500 degrees C without significant degradation is presented. The cells are formed epitaxially using the organometallic chemical vapor deposition growth process. The design utilizes a contact system that yields high stability at elevated temperature, and AM0 efficiency of up to 20% has been obtained with this approach. The efficiency is observed to change by less than 10% after a 5 min excursion to temperatures as high as 700 degrees C. Stability at higher temperatures and for longer times is discussed, and a comparison is made to the stability of conventional concentrator cells characterized by AM0 efficiencies of up to 23%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"14 1","pages":"930-933 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
The development of GaAs/AlGaAs double-heterostructure concentrator solar cells for space operation that are capable of surviving 5 min thermal excursions to temperatures well beyond 500 degrees C without significant degradation is presented. The cells are formed epitaxially using the organometallic chemical vapor deposition growth process. The design utilizes a contact system that yields high stability at elevated temperature, and AM0 efficiency of up to 20% has been obtained with this approach. The efficiency is observed to change by less than 10% after a 5 min excursion to temperatures as high as 700 degrees C. Stability at higher temperatures and for longer times is discussed, and a comparison is made to the stability of conventional concentrator cells characterized by AM0 efficiencies of up to 23%.<>
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