{"title":"Electron radiation and annealing of MOCVD GaAs and GaAs/Ge solar cells","authors":"M. Chung, D. Meier, J.R. Szedon, J. Bartko","doi":"10.1109/PVSC.1988.105839","DOIUrl":null,"url":null,"abstract":"A comparison of the radiation tolerances of MOCVD-grown GaAs/GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The electron radiation was delivered in doses of 1*10/sup 16/ cm/sup -2/ up to a total dose of 1*10/sup 17/ cm/sup -2/ for GaAs/GaAs and a total dose of 7*10/sup 16/ cm/sup -2/ for GaAs/Ge. Following each dose, the cells were annealed at either 250 degrees C or 300 degrees C for 1 h in nitrogen. It was found that the radiation tolerance of the GaAs/Ge cells was superior to that of the GaAs/GaAs cells. DLTS and EBIC measurements are presented.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"96 1","pages":"924-929 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105839","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A comparison of the radiation tolerances of MOCVD-grown GaAs/GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The electron radiation was delivered in doses of 1*10/sup 16/ cm/sup -2/ up to a total dose of 1*10/sup 17/ cm/sup -2/ for GaAs/GaAs and a total dose of 7*10/sup 16/ cm/sup -2/ for GaAs/Ge. Following each dose, the cells were annealed at either 250 degrees C or 300 degrees C for 1 h in nitrogen. It was found that the radiation tolerance of the GaAs/Ge cells was superior to that of the GaAs/GaAs cells. DLTS and EBIC measurements are presented.<>
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