Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

P. Lagger, C. Ostermaier, G. Pobegen, D. Pogany
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引用次数: 123

Abstract

GaN-power HEMTs with insulated gate structure suffer from threshold voltage drifts (ΔVth) under forward gate bias stress. We present a systematical approach to characterize the phenomenon and understand the dominant physical mechanisms causing this effect. We found out that ΔVth is caused by traps with a broad distribution of trapping and emission time constants. This distribution is analyzed using so called Capture Emission Time (CET) maps known from the study of bias temperature instability (BTI) in CMOS devices. Physical models, which could explain the broad distribution of time constants, are discussed.
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了解AlGaN/GaN mishemt阈值电压不稳定性的原因
具有绝缘栅极结构的gan功率hemt在正向栅极偏置应力下会产生阈值电压漂移(ΔVth)。我们提出了一种系统的方法来描述这种现象,并了解导致这种效应的主要物理机制。我们发现ΔVth是由圈闭和发射时间常数分布广泛的圈闭引起的。这种分布是用CMOS器件中偏置温度不稳定性(BTI)研究中已知的捕获发射时间(CET)图来分析的。讨论了可以解释时间常数广泛分布的物理模型。
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