S. Sugawa, I. Ohshima, H. Ishino, Y. Saito, M. Hirayama, T. Ohmi
{"title":"Advantage of silicon nitride gate insulator transistor by using microwave excited high-density plasma for applying 100nm technology node","authors":"S. Sugawa, I. Ohshima, H. Ishino, Y. Saito, M. Hirayama, T. Ohmi","doi":"10.1109/IEDM.2001.979639","DOIUrl":null,"url":null,"abstract":"We have succeeded to prepare a hgh quality silicon nitride gate insulator with lower gate leakage current in three orders of magnitude compared to that of conventional thermal oxide film, by using a Kr/NH3 mixed gas microwave-excited highdensity plasma with metal (TaN/Ta/TaN) gate. Moreover, we have evaluated the current drive capability dependence on the silicon surface orientation and found that the channel hole mobility on (110) surface at the channel-width direction of 13 5 degree from the (111) cut plane was 2.4 times hlgher than that of (100) surface. The CMOS transistor with the silicon nitride gate insulator formed by the microwave-excited plasma and TaN/Ta/TaN metal gate on (110) surface orientation silicon having a higher current drive capability and high integration density is the most practical candidate for lOOnm technology node and beyond.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"78 4 1","pages":"37.3_1-37.3_4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25
Abstract
We have succeeded to prepare a hgh quality silicon nitride gate insulator with lower gate leakage current in three orders of magnitude compared to that of conventional thermal oxide film, by using a Kr/NH3 mixed gas microwave-excited highdensity plasma with metal (TaN/Ta/TaN) gate. Moreover, we have evaluated the current drive capability dependence on the silicon surface orientation and found that the channel hole mobility on (110) surface at the channel-width direction of 13 5 degree from the (111) cut plane was 2.4 times hlgher than that of (100) surface. The CMOS transistor with the silicon nitride gate insulator formed by the microwave-excited plasma and TaN/Ta/TaN metal gate on (110) surface orientation silicon having a higher current drive capability and high integration density is the most practical candidate for lOOnm technology node and beyond.