Enabling CMOS Scaling Towards 3nm and Beyond

A. Mocuta, P. Weckx, S. Demuynck, D. Radisic, Y. Oniki, J. Ryckaert
{"title":"Enabling CMOS Scaling Towards 3nm and Beyond","authors":"A. Mocuta, P. Weckx, S. Demuynck, D. Radisic, Y. Oniki, J. Ryckaert","doi":"10.1109/VLSIT.2018.8510683","DOIUrl":null,"url":null,"abstract":"We look at several scaling boosters necessary to accomplish CMOS area scaling towards the 2nm node. We consider aspects of standard cell area scaling, transistor architecture, SRAM, and BEOL. We also demonstrate integrated flows and hardware feasibility for such scaling boosters.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"53 369 1","pages":"147-148"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

Abstract

We look at several scaling boosters necessary to accomplish CMOS area scaling towards the 2nm node. We consider aspects of standard cell area scaling, transistor architecture, SRAM, and BEOL. We also demonstrate integrated flows and hardware feasibility for such scaling boosters.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
使CMOS向3nm及以上扩展
我们看几个必要的缩放助推器,以实现CMOS面积缩放到2nm节点。我们考虑了标准单元面积缩放、晶体管结构、SRAM和BEOL等方面。我们还演示了这种缩放助推器的集成流程和硬件可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Low RA Magnetic Tunnel Junction Arrays in Conjunction with Low Switching Current and High Breakdown Voltage for STT-MRAM at 10 nm and Beyond A Circuit Compatible Accurate Compact Model for Ferroelectric-FETs A Threshold Switch Augmented Hybrid-FeFET (H-FeFET) with Enhanced Read Distinguishability and Reduced Programming Voltage for Non-Volatile Memory Applications Sensors and related devices for IoT, medicine and s mart-living A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1