Myoung-Jae Lee, Dongsoo Lee, Hojung Kim, Hyun-Sik Choi, Jong-bong Park, Hee-Goo Kim, Y. Cha, U. Chung, I. Yoo, Kinam Kim
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引用次数: 67
Abstract
We present here on a switch device made of a nitridized-chalcogenide glass for application in nanoscale array circuits. Previously, AsTeGeSi-based switches have had key issues with performance degradation over time. This is usually due to changes in the Te concentration in the device active region [1-3]. However, our AsTeGeSiN switches were able to overcome this limitation as well as scale down to 30 nm with an on current of 100 μA (J > 1.1×107A/cm2). Their cycling performance was shown to be greater than 108. Also, we demonstrate a memory cell using a TaOx resistance memory with the AsTeGeSiN select device.
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