Jongmyung Yoo, Y. Koo, Solomon Amsalu Chekol, Jaehyuk Park, Jeonghwan Song, H. Hwang
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引用次数: 11
Abstract
We have investigated various Te-based binary materials for Ovonic Threshold Switch (OTS) selector application. We found that both Te composition and difference in atomic radius of elements composing the telluride film are the key control parameters to maximize the OTS characteristics such as low leakage current (<5 nA for device area of 30 nm2), good switching endurance (108), and thermal stability (450°C).
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