Next-generation Fundus Camera with Full Color Image Acquisition in 0-lx Visible Light by 1.12-micron Square Pixel, 4K, 30-fps BSI CMOS Image Sensor with Advanced NIR Multi-spectral Imaging System

H. Sumi, H. Takehara, Shunsuke Miyazaki, Daiki Shirahige, K. Sasagawa, T. Tokuda, Yoshihiro Watanabe, N. Kishi, J. Ohta, M. Ishikawa
{"title":"Next-generation Fundus Camera with Full Color Image Acquisition in 0-lx Visible Light by 1.12-micron Square Pixel, 4K, 30-fps BSI CMOS Image Sensor with Advanced NIR Multi-spectral Imaging System","authors":"H. Sumi, H. Takehara, Shunsuke Miyazaki, Daiki Shirahige, K. Sasagawa, T. Tokuda, Yoshihiro Watanabe, N. Kishi, J. Ohta, M. Ishikawa","doi":"10.1109/VLSIT.2018.8510698","DOIUrl":null,"url":null,"abstract":"This paper presents a near-infrared (NIR) multi-spectral imaging system, which can be applied to a CMOS image sensor with fine pixels. Using the multi-spectral technology, NIR1: near 800 nm, NIR2: 870 nm, and NIR3: 940 nm in the NIR wavelength were acquired for a target image. Using this image sensor and imaging system and with the application of interpolation and color correction processing, a color image is reproduced by only multi-NIR signal without visible light (0 lx). We also developed a next-generation fundus camera, which employed this multi-spectral imaging system with a multi-NIR LED illuminator. This multi-NIR LED illumination system, which was also developed, is designed to emit light with high efficiency despite its size of 2.3 mm square in size. We applied this NIR multi-spectral camera module with the multi-NIR LED illuminator to the next-generation fundus camera; the retinal pigment appears progressively more transparent, revealing the underlying choroid.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"275 1","pages":"163-164"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510698","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper presents a near-infrared (NIR) multi-spectral imaging system, which can be applied to a CMOS image sensor with fine pixels. Using the multi-spectral technology, NIR1: near 800 nm, NIR2: 870 nm, and NIR3: 940 nm in the NIR wavelength were acquired for a target image. Using this image sensor and imaging system and with the application of interpolation and color correction processing, a color image is reproduced by only multi-NIR signal without visible light (0 lx). We also developed a next-generation fundus camera, which employed this multi-spectral imaging system with a multi-NIR LED illuminator. This multi-NIR LED illumination system, which was also developed, is designed to emit light with high efficiency despite its size of 2.3 mm square in size. We applied this NIR multi-spectral camera module with the multi-NIR LED illuminator to the next-generation fundus camera; the retinal pigment appears progressively more transparent, revealing the underlying choroid.
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采用1.12微米平方像素、4K、30帧/秒的BSI CMOS图像传感器和先进的近红外多光谱成像系统,实现0-lx可见光全彩色图像采集的下一代眼底相机
本文提出了一种适用于精细像素CMOS图像传感器的近红外多光谱成像系统。利用多光谱技术,获得了目标图像近红外波段的NIR1:近800 nm、NIR2: 870 nm和NIR3: 940 nm。利用该图像传感器和成像系统,应用插值和色彩校正处理,仅用多近红外信号就能在不需要可见光(0 lx)的情况下再现彩色图像。我们还开发了下一代眼底相机,该相机采用了多光谱成像系统和多近红外LED照明器。此次开发的多近红外LED照明系统虽然只有2.3平方毫米,但其发光效率很高。我们将该近红外多光谱相机模块与多近红外LED照明器应用于下一代眼底相机;视网膜色素逐渐变得更透明,显示出下面的脉络膜。
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